Surface-plasmon-enhanced light-emitting diodes

Min Ki Kwon, Ja Yeon Kim, Baek Hyun Kim, Il Kyu Park, Chu Young Cho, Clare Chisu Byeon, Seong Ju Park

Research output: Contribution to journalArticle

394 Citations (Scopus)

Abstract

A study was conducted to demonstrate a surface plasmons (SP)-enhanced InGaN/GaN multiple quantum well (MQW) blue LED with a Ag nanoparticles layers between the n-GaN layer and the MQW layer. It was observed during the study that the recombination rate in the QW was faster than emission from the QW as determined by time-resolved photoluminescence (TR-PL). The study used a blue LED deposited on a sapphire substrate in a growth chamber in a low-pressure metal-organic chemical vapor deposition systems. The study found that the Ag nanoparticles can be used to increase the IQE of InGaN/Gan blue LEDs. It was observed that the optical output power of LEDs was improved at an input current of 100 mA, the PL decay time of LEDs with Ag nanoparticles decreased, and PL decay rate can be enhanced by the QW-SP coupling rate.

Original languageEnglish
Pages (from-to)1253-1257
Number of pages5
JournalAdvanced Materials
Volume20
Issue number7
DOIs
Publication statusPublished - 2008 Apr 4
Externally publishedYes

Fingerprint

Light emitting diodes
Plasmons
Nanoparticles
Semiconductor quantum wells
Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
Chemical vapor deposition
Photoluminescence
Metals
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kwon, M. K., Kim, J. Y., Kim, B. H., Park, I. K., Cho, C. Y., Byeon, C. C., & Park, S. J. (2008). Surface-plasmon-enhanced light-emitting diodes. Advanced Materials, 20(7), 1253-1257. https://doi.org/10.1002/adma.200701130

Surface-plasmon-enhanced light-emitting diodes. / Kwon, Min Ki; Kim, Ja Yeon; Kim, Baek Hyun; Park, Il Kyu; Cho, Chu Young; Byeon, Clare Chisu; Park, Seong Ju.

In: Advanced Materials, Vol. 20, No. 7, 04.04.2008, p. 1253-1257.

Research output: Contribution to journalArticle

Kwon, MK, Kim, JY, Kim, BH, Park, IK, Cho, CY, Byeon, CC & Park, SJ 2008, 'Surface-plasmon-enhanced light-emitting diodes', Advanced Materials, vol. 20, no. 7, pp. 1253-1257. https://doi.org/10.1002/adma.200701130
Kwon MK, Kim JY, Kim BH, Park IK, Cho CY, Byeon CC et al. Surface-plasmon-enhanced light-emitting diodes. Advanced Materials. 2008 Apr 4;20(7):1253-1257. https://doi.org/10.1002/adma.200701130
Kwon, Min Ki ; Kim, Ja Yeon ; Kim, Baek Hyun ; Park, Il Kyu ; Cho, Chu Young ; Byeon, Clare Chisu ; Park, Seong Ju. / Surface-plasmon-enhanced light-emitting diodes. In: Advanced Materials. 2008 ; Vol. 20, No. 7. pp. 1253-1257.
@article{41a01a35b51340589a320f8da45333a4,
title = "Surface-plasmon-enhanced light-emitting diodes",
abstract = "A study was conducted to demonstrate a surface plasmons (SP)-enhanced InGaN/GaN multiple quantum well (MQW) blue LED with a Ag nanoparticles layers between the n-GaN layer and the MQW layer. It was observed during the study that the recombination rate in the QW was faster than emission from the QW as determined by time-resolved photoluminescence (TR-PL). The study used a blue LED deposited on a sapphire substrate in a growth chamber in a low-pressure metal-organic chemical vapor deposition systems. The study found that the Ag nanoparticles can be used to increase the IQE of InGaN/Gan blue LEDs. It was observed that the optical output power of LEDs was improved at an input current of 100 mA, the PL decay time of LEDs with Ag nanoparticles decreased, and PL decay rate can be enhanced by the QW-SP coupling rate.",
author = "Kwon, {Min Ki} and Kim, {Ja Yeon} and Kim, {Baek Hyun} and Park, {Il Kyu} and Cho, {Chu Young} and Byeon, {Clare Chisu} and Park, {Seong Ju}",
year = "2008",
month = "4",
day = "4",
doi = "10.1002/adma.200701130",
language = "English",
volume = "20",
pages = "1253--1257",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "7",

}

TY - JOUR

T1 - Surface-plasmon-enhanced light-emitting diodes

AU - Kwon, Min Ki

AU - Kim, Ja Yeon

AU - Kim, Baek Hyun

AU - Park, Il Kyu

AU - Cho, Chu Young

AU - Byeon, Clare Chisu

AU - Park, Seong Ju

PY - 2008/4/4

Y1 - 2008/4/4

N2 - A study was conducted to demonstrate a surface plasmons (SP)-enhanced InGaN/GaN multiple quantum well (MQW) blue LED with a Ag nanoparticles layers between the n-GaN layer and the MQW layer. It was observed during the study that the recombination rate in the QW was faster than emission from the QW as determined by time-resolved photoluminescence (TR-PL). The study used a blue LED deposited on a sapphire substrate in a growth chamber in a low-pressure metal-organic chemical vapor deposition systems. The study found that the Ag nanoparticles can be used to increase the IQE of InGaN/Gan blue LEDs. It was observed that the optical output power of LEDs was improved at an input current of 100 mA, the PL decay time of LEDs with Ag nanoparticles decreased, and PL decay rate can be enhanced by the QW-SP coupling rate.

AB - A study was conducted to demonstrate a surface plasmons (SP)-enhanced InGaN/GaN multiple quantum well (MQW) blue LED with a Ag nanoparticles layers between the n-GaN layer and the MQW layer. It was observed during the study that the recombination rate in the QW was faster than emission from the QW as determined by time-resolved photoluminescence (TR-PL). The study used a blue LED deposited on a sapphire substrate in a growth chamber in a low-pressure metal-organic chemical vapor deposition systems. The study found that the Ag nanoparticles can be used to increase the IQE of InGaN/Gan blue LEDs. It was observed that the optical output power of LEDs was improved at an input current of 100 mA, the PL decay time of LEDs with Ag nanoparticles decreased, and PL decay rate can be enhanced by the QW-SP coupling rate.

UR - http://www.scopus.com/inward/record.url?scp=48249155555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48249155555&partnerID=8YFLogxK

U2 - 10.1002/adma.200701130

DO - 10.1002/adma.200701130

M3 - Article

VL - 20

SP - 1253

EP - 1257

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 7

ER -