Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever

M. S. Suh, C. S. Lee, Sung Hyun Kim, K. I. Lee, J. W. Cho, Y. Kuk, J. K. Shin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To verify the application of the new atomic force microscopy (AFM) cantilever with field effect transistor (FET) structure, the images of the surface potential in the silicon dioxide (SiO2)-silicon nitride (SiN)-silicon dioxide-silicon (ONOS) structure were examined in this study. The images were obtained under the continuous application of dc bias and short time in the contact-mode AFM. And the FET cantilever was not affected by external parameters, such as moisture and temperature. The duration of the charge confinement in this study was shorter than those in previous studies because the SiN layer was very thin, measuring less than 5 nm. The retention time of the surface potential in the ONOS structure was achieved above 2 h at high voltage applied to the gate. The retention time, however, was about 1 h at low-voltage conditions.

Original languageEnglish
Pages (from-to)597-603
Number of pages7
JournalSensors and Actuators, A: Physical
Volume136
Issue number2
DOIs
Publication statusPublished - 2007 May 1
Externally publishedYes

Fingerprint

Silicon oxides
Surface potential
Field effect transistors
Silicon nitride
silicon oxides
Nitrides
Silicon Dioxide
Oxides
nitrides
Atomic force microscopy
field effect transistors
Silica
Imaging techniques
oxides
Electric potential
Silicon
silicon nitrides
Moisture
atomic force microscopy
silicon dioxide

Keywords

  • AFM
  • Cantilever
  • Charge sensing
  • Field effect transistor (FET)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever. / Suh, M. S.; Lee, C. S.; Kim, Sung Hyun; Lee, K. I.; Cho, J. W.; Kuk, Y.; Shin, J. K.

In: Sensors and Actuators, A: Physical, Vol. 136, No. 2, 01.05.2007, p. 597-603.

Research output: Contribution to journalArticle

Suh, M. S. ; Lee, C. S. ; Kim, Sung Hyun ; Lee, K. I. ; Cho, J. W. ; Kuk, Y. ; Shin, J. K. / Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever. In: Sensors and Actuators, A: Physical. 2007 ; Vol. 136, No. 2. pp. 597-603.
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