Abstract
To verify the application of the new atomic force microscopy (AFM) cantilever with field effect transistor (FET) structure, the images of the surface potential in the silicon dioxide (SiO2)-silicon nitride (SiN)-silicon dioxide-silicon (ONOS) structure were examined in this study. The images were obtained under the continuous application of dc bias and short time in the contact-mode AFM. And the FET cantilever was not affected by external parameters, such as moisture and temperature. The duration of the charge confinement in this study was shorter than those in previous studies because the SiN layer was very thin, measuring less than 5 nm. The retention time of the surface potential in the ONOS structure was achieved above 2 h at high voltage applied to the gate. The retention time, however, was about 1 h at low-voltage conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 597-603 |
| Number of pages | 7 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 136 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 May 1 |
| Externally published | Yes |
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Keywords
- AFM
- Cantilever
- Charge sensing
- Field effect transistor (FET)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Instrumentation
Cite this
Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever. / Suh, M. S.; Lee, C. S.; Kim, Sung Hyun; Lee, K. I.; Cho, J. W.; Kuk, Y.; Shin, J. K.
In: Sensors and Actuators, A: Physical, Vol. 136, No. 2, 01.05.2007, p. 597-603.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever
AU - Suh, M. S.
AU - Lee, C. S.
AU - Kim, Sung Hyun
AU - Lee, K. I.
AU - Cho, J. W.
AU - Kuk, Y.
AU - Shin, J. K.
PY - 2007/5/1
Y1 - 2007/5/1
N2 - To verify the application of the new atomic force microscopy (AFM) cantilever with field effect transistor (FET) structure, the images of the surface potential in the silicon dioxide (SiO2)-silicon nitride (SiN)-silicon dioxide-silicon (ONOS) structure were examined in this study. The images were obtained under the continuous application of dc bias and short time in the contact-mode AFM. And the FET cantilever was not affected by external parameters, such as moisture and temperature. The duration of the charge confinement in this study was shorter than those in previous studies because the SiN layer was very thin, measuring less than 5 nm. The retention time of the surface potential in the ONOS structure was achieved above 2 h at high voltage applied to the gate. The retention time, however, was about 1 h at low-voltage conditions.
AB - To verify the application of the new atomic force microscopy (AFM) cantilever with field effect transistor (FET) structure, the images of the surface potential in the silicon dioxide (SiO2)-silicon nitride (SiN)-silicon dioxide-silicon (ONOS) structure were examined in this study. The images were obtained under the continuous application of dc bias and short time in the contact-mode AFM. And the FET cantilever was not affected by external parameters, such as moisture and temperature. The duration of the charge confinement in this study was shorter than those in previous studies because the SiN layer was very thin, measuring less than 5 nm. The retention time of the surface potential in the ONOS structure was achieved above 2 h at high voltage applied to the gate. The retention time, however, was about 1 h at low-voltage conditions.
KW - AFM
KW - Cantilever
KW - Charge sensing
KW - Field effect transistor (FET)
UR - http://www.scopus.com/inward/record.url?scp=34247574176&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247574176&partnerID=8YFLogxK
U2 - 10.1016/j.sna.2007.01.005
DO - 10.1016/j.sna.2007.01.005
M3 - Article
VL - 136
SP - 597
EP - 603
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 2
ER -