Surface potential mapping in the SiO2 system using a FET cantilever

Moon Suhk Suh, Churl Seung Lee, Sung Hyun Kim, Kyoung Il Lee, Jin Woo Cho, Young Jin Choi, Jin Koog Shin

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2 Citations (Scopus)

Abstract

The surface potential variations are measured, according to the enhanced measuring speed and voltage sensitivity, using an active device, such as a field-effect-transistor (FET) [R.C. Barrett, C.F. Quate, J. Appl. Phys. 70 (1991) 2725; Y. Martin, D.W. Habraham, H.K. Wickramasighe, Appl. Phys. Lett. 52 (1988) 1103; G.H. Buh, H.J. Chung, Y. Kuk, Appl. Phys. Lett. 79 (2001) 2010]. In this study, the surface potential was mapped in the patterned SiO2 medium at room temperature. An improved FET-tip cantilever, which has a source, a drain, and an n-channel, was used in this study. The potential images were analyzed both in the contact mode and the non-contact mode, using only a pre-amplifier system instead of a lock-in the amplifier. A probe was used to measure the surface potential with a resolution of <100 nm in the contact mode operation, based on the edge of the patterned SiO2 islands. In the non-contact mode, however, the resolution of the surface potential was measured at about 270 nm at low scanning speed. The probe can also be used to write charges on a surface.

Original languageEnglish
JournalCurrent Applied Physics
Volume6
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2006 Aug 1
Externally publishedYes

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Keywords

  • AFM
  • Cantilever
  • Contact mode
  • FET
  • Non-contact mode
  • Surface potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science (miscellaneous)

Cite this

Suh, M. S., Lee, C. S., Kim, S. H., Lee, K. I., Cho, J. W., Choi, Y. J., & Shin, J. K. (2006). Surface potential mapping in the SiO2 system using a FET cantilever. Current Applied Physics, 6(SUPPL. 1). https://doi.org/10.1016/j.cap.2006.01.045