The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces