Abstract
The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.
Original language | English |
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Pages (from-to) | 351-356 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 440 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry