Surface reconstructions of the Si(100)-Ge system

S. J. Kahng; J. Y. Park; Y. Kuk

doi:10.1016/S0039-6028(99)00842-0

Surface reconstructions of the Si(100)-Ge system

S. J. Kahng, J. Y. Park, Y. Kuk

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

Original language	English
Pages (from-to)	351-356
Number of pages	6
Journal	Surface Science
Volume	440
Issue number	3
DOIs	https://doi.org/10.1016/S0039-6028(99)00842-0
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Surface reconstructions of the Si(100)-Ge system",

abstract = "The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.",

author = "Kahng, {S. J.} and Park, {J. Y.} and Y. Kuk",

note = "Funding Information: This work is supported by Ministry of Science and Technology of Korea through the National Creative Research Initiatives (NCRI).",

year = "1999",

doi = "10.1016/S0039-6028(99)00842-0",

language = "English",

volume = "440",

pages = "351--356",

journal = "Surface Science",

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TY - JOUR

T1 - Surface reconstructions of the Si(100)-Ge system

AU - Kahng, S. J.

AU - Park, J. Y.

AU - Kuk, Y.

N1 - Funding Information: This work is supported by Ministry of Science and Technology of Korea through the National Creative Research Initiatives (NCRI).

PY - 1999

Y1 - 1999

N2 - The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

AB - The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

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DO - 10.1016/S0039-6028(99)00842-0

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EP - 356

JO - Surface Science

JF - Surface Science

SN - 0039-6028

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Surface reconstructions of the Si(100)-Ge system

Abstract

ASJC Scopus subject areas

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