Abstract
The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.
| Original language | English |
|---|---|
| Pages (from-to) | 351-356 |
| Number of pages | 6 |
| Journal | Surface Science |
| Volume | 440 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1999 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Kahng, S. J., Park, J. Y., & Kuk, Y. (1999). Surface reconstructions of the Si(100)-Ge system. Surface Science, 440(3), 351-356. https://doi.org/10.1016/S0039-6028(99)00842-0