Surface reconstructions of the Si(100)-Ge system

S. J. Kahng, J. Y. Park, Y. Kuk

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

Original languageEnglish
Pages (from-to)351-356
Number of pages6
JournalSurface Science
Volume440
Issue number3
DOIs
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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