Surface reconstructions of the Si(100)-Ge system

Se-Jong Kahng; J. Y. Park; Y. Kuk

doi:10.1016/S0039-6028(99)00842-0

Surface reconstructions of the Si(100)-Ge system

Se-Jong Kahng, J. Y. Park, Y. Kuk

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

Original language	English
Pages (from-to)	351-356
Number of pages	6
Journal	Surface Science
Volume	440
Issue number	3
DOIs	https://doi.org/10.1016/S0039-6028(99)00842-0
Publication status	Published - 1999 Dec 1
Externally published	Yes

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ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

Cite this

Kahng, S-J., Park, J. Y., & Kuk, Y. (1999). Surface reconstructions of the Si(100)-Ge system. Surface Science, 440(3), 351-356. https://doi.org/10.1016/S0039-6028(99)00842-0

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AB - The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

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10.1016/S0039-6028(99)00842-0