Surface reconstructions of the Si(100)-Ge system

S. J. Kahng, J. Y. Park, Y. Kuk

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290 °C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420 °C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570 °C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.

Original languageEnglish
Pages (from-to)351-356
Number of pages6
JournalSurface Science
Issue number3
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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