Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions

B. S. Chun, C. M. Choi, I. C. Chu, Seong Rae Lee, Young-geun Kim

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CoNbZr layers have been employed in magnetic tunnel junctions (MTJs) to substitute traditionally used Ta layers. The CoNbZr-based junctions exhibited better Vh (the voltage where MR ratio becomes half) characteristics than Ta-based ones in as-deposited state (164 mV vs. 151 mV at 10 K). Moreover, Vh gradually increased at higher temperatures for CoNbZr-based junctions while almost no change was observed for Ta-based ones (345 mV vs. 144 mV at RT, respectively). This is because CoNbZr-based junctions offer smoother interface structure than Ta-based one.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Issue numberSUPPL. 1
Publication statusPublished - 2004 May 1



  • Bias voltage dependence
  • CoNbZr
  • Magnetic tunnel junctions
  • Surface roughness

ASJC Scopus subject areas

  • Condensed Matter Physics

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