Surface state characterization methods for SiO 2 On 4H-SiC

J. R. Laroche, Ji Hyun Kim, J. W. Johnson, B. Luo, B. S. Kang, R. Mehaadru, Y. Irokawa, S. J. Pearton, G. Chung, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The semiconductor SiC is of great interest for high temperature and high power applications due to its high saturation velocity of electrons, high break down field, high thermal conductivity, and wide band gap. It is convenient to compare and contrast surface density measurement techniques on such an important substrate. Vertical 4H-SiC metal oxide semiconductor diodes were demonstrated utilizing SiO 2 as the gate oxide. The Terman, AC, quasistatic, and HiLo methods, were used to extract surface state densities from the SiC 2/SiC interface. Surface state densities from 10 12 to 10 11 cm -2 eV -1 were observed.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsR.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren
Pages282-291
Number of pages10
Volume11
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Laroche, J. R., Kim, J. H., Johnson, J. W., Luo, B., Kang, B. S., Mehaadru, R., Irokawa, Y., Pearton, S. J., Chung, G., & Ren, F. (2003). Surface state characterization methods for SiO 2 On 4H-SiC. In R. F. Kopt, A. G. Baca, S. J. Pearton, & F. Ren (Eds.), Proceedings - Electrochemical Society (Vol. 11, pp. 282-291)