Surface state characterization methods for SiO 2 On 4H-SiC

J. R. Laroche; J. Kim; J. W. Johnson; B. Luo; B. S. Kang; R. Mehaadru; Y. Irokawa; S. J. Pearton; G. Chung; F. Ren

Surface state characterization methods for SiO ₂ On 4H-SiC

J. R. Laroche, J. Kim, J. W. Johnson, B. Luo, B. S. Kang, R. Mehaadru, Y. Irokawa, S. J. Pearton, G. Chung, F. Ren

Research output: Contribution to conference › Paper › peer-review

Abstract

The semiconductor SiC is of great interest for high temperature and high power applications due to its high saturation velocity of electrons, high break down field, high thermal conductivity, and wide band gap. It is convenient to compare and contrast surface density measurement techniques on such an important substrate. Vertical 4H-SiC metal oxide semiconductor diodes were demonstrated utilizing SiO ₂ as the gate oxide. The Terman, AC, quasistatic, and HiLo methods, were used to extract surface state densities from the SiC ₂/SiC interface. Surface state densities from 10 ¹² to 10 ¹¹ cm ^-2 eV ^-1 were observed.

Original language	English
Pages	282-291
Number of pages	10
Publication status	Published - 2003
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	03/10/12 → 03/10/17

ASJC Scopus subject areas

Engineering(all)

Cite this

Laroche, J. R., Kim, J., Johnson, J. W., Luo, B., Kang, B. S., Mehaadru, R., Irokawa, Y., Pearton, S. J., Chung, G., & Ren, F. (2003). Surface state characterization methods for SiO ₂ On 4H-SiC. 282-291. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Surface state characterization methods for SiO ₂ On 4H-SiC. / Laroche, J. R.; Kim, J.; Johnson, J. W. et al.

2003. 282-291 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

Laroche, JR, Kim, J, Johnson, JW, Luo, B, Kang, BS, Mehaadru, R, Irokawa, Y, Pearton, SJ, Chung, G & Ren, F 2003, 'Surface state characterization methods for SiO ₂ On 4H-SiC', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12 - 03/10/17 pp. 282-291.

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abstract = "The semiconductor SiC is of great interest for high temperature and high power applications due to its high saturation velocity of electrons, high break down field, high thermal conductivity, and wide band gap. It is convenient to compare and contrast surface density measurement techniques on such an important substrate. Vertical 4H-SiC metal oxide semiconductor diodes were demonstrated utilizing SiO 2 as the gate oxide. The Terman, AC, quasistatic, and HiLo methods, were used to extract surface state densities from the SiC 2/SiC interface. Surface state densities from 10 12 to 10 11 cm -2 eV -1 were observed.",

author = "Laroche, {J. R.} and J. Kim and Johnson, {J. W.} and B. Luo and Kang, {B. S.} and R. Mehaadru and Y. Irokawa and Pearton, {S. J.} and G. Chung and F. Ren",

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note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

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AU - Laroche, J. R.

AU - Kim, J.

AU - Johnson, J. W.

AU - Luo, B.

AU - Kang, B. S.

AU - Mehaadru, R.

AU - Irokawa, Y.

AU - Pearton, S. J.

AU - Chung, G.

AU - Ren, F.

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AB - The semiconductor SiC is of great interest for high temperature and high power applications due to its high saturation velocity of electrons, high break down field, high thermal conductivity, and wide band gap. It is convenient to compare and contrast surface density measurement techniques on such an important substrate. Vertical 4H-SiC metal oxide semiconductor diodes were demonstrated utilizing SiO 2 as the gate oxide. The Terman, AC, quasistatic, and HiLo methods, were used to extract surface state densities from the SiC 2/SiC interface. Surface state densities from 10 12 to 10 11 cm -2 eV -1 were observed.

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Surface state characterization methods for SiO ₂ On 4H-SiC

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