The semiconductor SiC is of great interest for high temperature and high power applications due to its high saturation velocity of electrons, high break down field, high thermal conductivity, and wide band gap. It is convenient to compare and contrast surface density measurement techniques on such an important substrate. Vertical 4H-SiC metal oxide semiconductor diodes were demonstrated utilizing SiO 2 as the gate oxide. The Terman, AC, quasistatic, and HiLo methods, were used to extract surface state densities from the SiC 2/SiC interface. Surface state densities from 10 12 to 10 11 cm -2 eV -1 were observed.
|Number of pages||10|
|Publication status||Published - 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Other||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||03/10/12 → 03/10/17|
ASJC Scopus subject areas