Surface-treatment effects of a sapphire substrate by He+-, Ar+-, and Xe+-ion implantations for GaN epitaxial layers

Junggeun Jhin, Jong Hyeob Baek, Dong Jin Byun

Research output: Contribution to journalArticle

Abstract

The structural, electrical, and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. GaN or AlN buffer layers and pre-treatment were indispensably introduced before GaN-epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ion-implanted sapphire(0001 ) substrates. The crystal and optical properties of the GaN epilayers grown in ion-implanted sapphire(0001) substrates were improved. Also, an excessively roughened and modified surface caused by ions degraded the GaN epilayers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates improved the properties of the GaN epilayers grown by MOCVD. It is obvious that the ion-implanted pre-treatment of sapphire(0001) substrates can be an alternative pre-treatment procedure for GaN deposition and has the potential to improve the properties of the GaN epilayers on sapphire(0001) substrates.

Original languageEnglish
Pages (from-to)535-539
Number of pages5
JournalJournal of the Society for Information Display
Volume16
Issue number4
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Aluminum Oxide
Epitaxial layers
surface treatment
Epilayers
Sapphire
Ion implantation
Surface treatment
ion implantation
sapphire
Ions
Substrates
pretreatment
ions
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Optical properties
optical properties
Buffer layers
Free energy
Structural properties

Keywords

  • GaN
  • Ion implantation
  • Sapphire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Surface-treatment effects of a sapphire substrate by He+-, Ar+-, and Xe+-ion implantations for GaN epitaxial layers. / Jhin, Junggeun; Baek, Jong Hyeob; Byun, Dong Jin.

In: Journal of the Society for Information Display, Vol. 16, No. 4, 01.04.2008, p. 535-539.

Research output: Contribution to journalArticle

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