A cross-point-type phase-change random access y memory (PRAM) cell without an access transistor is successfully fabricated with the In2Se 3 resistor, which has much higher electrical resistivity than conventionally used Ge2Sb2Te5 and of which electrical resistivity can be varied by the factor of 105related with the degree of crystallization. Thus, the switching power can be delivered more effectively due to its higher electrical resistivity and device failure related to phase decomposition can be avoided since In2Se3 is single phase binary compound. The static-mode switching (dc test) is tested for the 5 μm In2Se3 PRAM device. In the first sweep, the as-grown amorphous In2Se3 resistor showed the high resistance state at low voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was drastically reduced through the formation of an electrically conducting path. The pulsed-mode switching of the 5 μm In2Se3 PRAM device shows that the reset (crystalline → amorphous) of the device was done with a 70 ns 3.1 V pulse and the set (amorphous → crystalline) of the device was done with a 10 μs 1.2 V pulse. Reading was accomplished by measuring the device resistance at 0.2 V and as high as 100 of switching dynamic range (ratio of R high to RlOW) was observed.
- Indium selenide (InSe)
- Phase-change random access memory (PRAM)
- Pulsed-mode switching
- Static-mode switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering