Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

J. Y. Hwang, S. S. Kim, M. Y. Kim, J. R. Rhee, B. S. Chun, Young-geun Kim, T. W. Kim, H. B. Lee, S. C. Yu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Tunnel junctions
tunnel junctions
Demagnetization
demagnetization
Saturation magnetization
Coercive force
coercivity
Anisotropy
saturation
magnetization
anisotropy
sensitivity
simulation

Keywords

  • Amorphous magnetic materials
  • Coercivity
  • CoFeSiB
  • Magnetic tunnel junction
  • Switching characteristics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer. / Hwang, J. Y.; Kim, S. S.; Kim, M. Y.; Rhee, J. R.; Chun, B. S.; Kim, Young-geun; Kim, T. W.; Lee, H. B.; Yu, S. C.

In: Journal of Magnetism and Magnetic Materials, Vol. 304, No. 1, 01.09.2006.

Research output: Contribution to journalArticle

Hwang, J. Y. ; Kim, S. S. ; Kim, M. Y. ; Rhee, J. R. ; Chun, B. S. ; Kim, Young-geun ; Kim, T. W. ; Lee, H. B. ; Yu, S. C. / Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer. In: Journal of Magnetism and Magnetic Materials. 2006 ; Vol. 304, No. 1.
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AU - Kim, S. S.

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AU - Rhee, J. R.

AU - Chun, B. S.

AU - Kim, Young-geun

AU - Kim, T. W.

AU - Lee, H. B.

AU - Yu, S. C.

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AB - The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

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