Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

J. Y. Hwang; S. S. Kim; M. Y. Kim; J. R. Rhee; B. S. Chun; Y. K. Kim; T. W. Kim; H. B. Lee; S. C. Yu

doi:10.1016/j.jmmm.2006.02.017

Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

J. Y. Hwang, S. S. Kim, M. Y. Kim, J. R. Rhee, B. S. Chun, Y. K. Kim, T. W. Kim, H. B. Lee, S. C. Yu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO₂/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO_x/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (M_s) of 560 emu/cm³ and high anisotropy constant (K_u) of 2,800 erg/cm³. These properties caused low coercivity (H_c) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Original language	English
Pages (from-to)	e276-e278
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.017
Publication status	Published - 2006 Sept

Keywords

Amorphous magnetic materials
CoFeSiB
Coercivity
Magnetic tunnel junction
Switching characteristics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.02.017

Cite this

@article{ded85dbb026049c39696b8e85bb60f26,

title = "Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer",

abstract = "The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.",

keywords = "Amorphous magnetic materials, CoFeSiB, Coercivity, Magnetic tunnel junction, Switching characteristics",

author = "Hwang, {J. Y.} and Kim, {S. S.} and Kim, {M. Y.} and Rhee, {J. R.} and Chun, {B. S.} and Kim, {Y. K.} and Kim, {T. W.} and Lee, {H. B.} and Yu, {S. C.}",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.017",

language = "English",

volume = "304",

pages = "e276--e278",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

AU - Hwang, J. Y.

AU - Kim, S. S.

AU - Kim, M. Y.

AU - Rhee, J. R.

AU - Chun, B. S.

AU - Kim, Y. K.

AU - Kim, T. W.

AU - Lee, H. B.

AU - Yu, S. C.

PY - 2006/9

Y1 - 2006/9

N2 - The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

AB - The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

KW - Amorphous magnetic materials

KW - CoFeSiB

KW - Coercivity

KW - Magnetic tunnel junction

KW - Switching characteristics

UR - http://www.scopus.com/inward/record.url?scp=33646867206&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.02.017

DO - 10.1016/j.jmmm.2006.02.017

M3 - Article

AN - SCOPUS:33646867206

SN - 0304-8853

VL - 304

SP - e276-e278

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this