Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Yun Ki Lee, Byong Sun Chun, Young-geun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Won Cheol Jeong, Jangeun Lee, Hong Sik Jeong

Research output: Contribution to journalArticle

Abstract

The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t1 nm)/Ru (0.8 nm)/NiFe (t2 nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.

Original languageEnglish
Pages (from-to)2688-2690
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

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Tunnel junctions
tunnel junctions
Magnetic domains
magnetic domains
Magnetization
magnetization

Keywords

  • Magnetic tunnel junction
  • MRAM
  • Switching field
  • Synthetic antiferromagnet

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer. / Lee, Yun Ki; Chun, Byong Sun; Kim, Young-geun; Hwang, Injun; Park, Wanjun; Kim, Taewan; Jeong, Won Cheol; Lee, Jangeun; Jeong, Hong Sik.

In: IEEE Transactions on Magnetics, Vol. 41, No. 10, 01.10.2005, p. 2688-2690.

Research output: Contribution to journalArticle

Lee, YK, Chun, BS, Kim, Y, Hwang, I, Park, W, Kim, T, Jeong, WC, Lee, J & Jeong, HS 2005, 'Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer', IEEE Transactions on Magnetics, vol. 41, no. 10, pp. 2688-2690. https://doi.org/10.1109/TMAG.2005.855298
Lee, Yun Ki ; Chun, Byong Sun ; Kim, Young-geun ; Hwang, Injun ; Park, Wanjun ; Kim, Taewan ; Jeong, Won Cheol ; Lee, Jangeun ; Jeong, Hong Sik. / Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer. In: IEEE Transactions on Magnetics. 2005 ; Vol. 41, No. 10. pp. 2688-2690.
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