Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Yun Ki Lee; Byong Sun Chun; Young Keun Kim; Injun Hwang; Wanjun Park; Taewan Kim; Won Cheol Jeong; Jangeun Lee; Hong Sik Jeong

doi:10.1109/TMAG.2005.855298

Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Yun Ki Lee, Byong Sun Chun, Young Keun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Won Cheol Jeong, Jangeun Lee, Hong Sik Jeong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t₁ nm)/Ru (0.8 nm)/NiFe (t₂ nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.

Original language	English
Pages (from-to)	2688-2690
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.855298
Publication status	Published - 2005 Oct

Keywords

MRAM
Magnetic tunnel junction
Switching field
Synthetic antiferromagnet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2005.855298

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title = "Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer",

abstract = "The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t1 nm)/Ru (0.8 nm)/NiFe (t2 nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.",

keywords = "MRAM, Magnetic tunnel junction, Switching field, Synthetic antiferromagnet",

author = "Lee, {Yun Ki} and Chun, {Byong Sun} and Kim, {Young Keun} and Injun Hwang and Wanjun Park and Taewan Kim and Jeong, {Won Cheol} and Jangeun Lee and Jeong, {Hong Sik}",

note = "Funding Information: This work was supported by the Korean Ministry of Science and Technology under contract with the National Research Laboratory Program and by the National Program for Tera-Level Nanodevices of the Korean Ministry of Science and Technology as a 21st Century Frontier Program.",

year = "2005",

month = oct,

doi = "10.1109/TMAG.2005.855298",

language = "English",

volume = "41",

pages = "2688--2690",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

AU - Lee, Yun Ki

AU - Chun, Byong Sun

AU - Kim, Young Keun

AU - Hwang, Injun

AU - Park, Wanjun

AU - Kim, Taewan

AU - Jeong, Won Cheol

AU - Lee, Jangeun

AU - Jeong, Hong Sik

N1 - Funding Information: This work was supported by the Korean Ministry of Science and Technology under contract with the National Research Laboratory Program and by the National Program for Tera-Level Nanodevices of the Korean Ministry of Science and Technology as a 21st Century Frontier Program.

PY - 2005/10

Y1 - 2005/10

N2 - The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t1 nm)/Ru (0.8 nm)/NiFe (t2 nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.

AB - The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t1 nm)/Ru (0.8 nm)/NiFe (t2 nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.

KW - MRAM

KW - Magnetic tunnel junction

KW - Switching field

KW - Synthetic antiferromagnet

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U2 - 10.1109/TMAG.2005.855298

DO - 10.1109/TMAG.2005.855298

M3 - Article

AN - SCOPUS:27744479024

SN - 0018-9464

VL - 41

SP - 2688

EP - 2690

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Abstract

Keywords

ASJC Scopus subject areas

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