Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Yun Ki Lee, Byong Sun Chun, Young Keun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Won Cheol Jeong, Jangeun Lee, Hong Sik Jeong

Research output: Contribution to journalArticle

Abstract

The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t1 nm)/Ru (0.8 nm)/NiFe (t2 nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.

Original languageEnglish
Pages (from-to)2688-2690
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct

Keywords

  • MRAM
  • Magnetic tunnel junction
  • Switching field
  • Synthetic antiferromagnet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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