Switching characteristics of nanowire feedback field-effect transistors with nanocrystal charge spacers on plastic substrates

Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)


In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p+-i-n+ Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of ∼105 and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.

Original languageEnglish
Pages (from-to)3781-3787
Number of pages7
JournalACS Nano
Issue number4
Publication statusPublished - 2014 Apr 22



  • feedback loop
  • field-effect transistor
  • plastic substrate
  • silicon nanowires
  • subthreshold swing

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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