Switching characteristics of spin valve devices designed for MRAM applications

S. E. Russek, J. O. Oti, Young-geun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.

Original languageEnglish
Pages (from-to)6-8
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198
DOIs
Publication statusPublished - 1999 Jun 1
Externally publishedYes

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Linewidth
aspect ratio
Aspect ratio
asymmetry
Magnetostatics
magnetostatics
low frequencies

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Switching characteristics of spin valve devices designed for MRAM applications. / Russek, S. E.; Oti, J. O.; Kim, Young-geun.

In: Journal of Magnetism and Magnetic Materials, Vol. 198, 01.06.1999, p. 6-8.

Research output: Contribution to journalArticle

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