Synaptic Barristor Based on Phase-Engineered 2D Heterostructures

Woong Huh, Seonghoon Jang, Jae Yoon Lee, Donghun Lee, Donghun Lee, Jung Min Lee, Hong-Gyu Park, Jong Chan Kim, Hu Young Jeong, Gunuk Wang, Chul-Ho Lee

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The development of energy-efficient artificial synapses capable of manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, a new class of artificial synaptic architecture, a three-terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable-barrier tungsten selenide/graphene Schottky diode, termed as a 'synaptic barrister,' are reported. The device can implement essential synaptic characteristics, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Owing to the electrostatically controlled barrier height in the ultrathin van der Waals heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2-0.5 V. Notably, by electrostatic tuning with a gate terminal, it can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. Such gate tunability cannot be accomplished by previously reported synaptic devices such as memristors and synaptic transistors only mimicking the two-neuronal-based synapse. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.

Original languageEnglish
JournalAdvanced Materials
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Memristors
Plasticity
Heterojunctions
Tuning
Tungsten
Graphite
Consolidation
Graphene
Neurotransmitter Agents
Electrostatics
Transistors
Diodes
Neural networks
Oxides
Electric potential
tungsten oxide

Keywords

  • 2D materials
  • Artificial synapse
  • Barristor
  • Heterostructure
  • Memristor
  • Neuromorphic application

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures. / Huh, Woong; Jang, Seonghoon; Lee, Jae Yoon; Lee, Donghun; Lee, Donghun; Lee, Jung Min; Park, Hong-Gyu; Kim, Jong Chan; Jeong, Hu Young; Wang, Gunuk; Lee, Chul-Ho.

In: Advanced Materials, 01.01.2018.

Research output: Contribution to journalArticle

Huh, Woong ; Jang, Seonghoon ; Lee, Jae Yoon ; Lee, Donghun ; Lee, Donghun ; Lee, Jung Min ; Park, Hong-Gyu ; Kim, Jong Chan ; Jeong, Hu Young ; Wang, Gunuk ; Lee, Chul-Ho. / Synaptic Barristor Based on Phase-Engineered 2D Heterostructures. In: Advanced Materials. 2018.
@article{6063d861b7904f96bae06a883d836a6a,
title = "Synaptic Barristor Based on Phase-Engineered 2D Heterostructures",
abstract = "The development of energy-efficient artificial synapses capable of manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, a new class of artificial synaptic architecture, a three-terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable-barrier tungsten selenide/graphene Schottky diode, termed as a 'synaptic barrister,' are reported. The device can implement essential synaptic characteristics, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Owing to the electrostatically controlled barrier height in the ultrathin van der Waals heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2-0.5 V. Notably, by electrostatic tuning with a gate terminal, it can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. Such gate tunability cannot be accomplished by previously reported synaptic devices such as memristors and synaptic transistors only mimicking the two-neuronal-based synapse. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.",
keywords = "2D materials, Artificial synapse, Barristor, Heterostructure, Memristor, Neuromorphic application",
author = "Woong Huh and Seonghoon Jang and Lee, {Jae Yoon} and Donghun Lee and Donghun Lee and Lee, {Jung Min} and Hong-Gyu Park and Kim, {Jong Chan} and Jeong, {Hu Young} and Gunuk Wang and Chul-Ho Lee",
year = "2018",
month = "1",
day = "1",
doi = "10.1002/adma.201801447",
language = "English",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Synaptic Barristor Based on Phase-Engineered 2D Heterostructures

AU - Huh, Woong

AU - Jang, Seonghoon

AU - Lee, Jae Yoon

AU - Lee, Donghun

AU - Lee, Donghun

AU - Lee, Jung Min

AU - Park, Hong-Gyu

AU - Kim, Jong Chan

AU - Jeong, Hu Young

AU - Wang, Gunuk

AU - Lee, Chul-Ho

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The development of energy-efficient artificial synapses capable of manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, a new class of artificial synaptic architecture, a three-terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable-barrier tungsten selenide/graphene Schottky diode, termed as a 'synaptic barrister,' are reported. The device can implement essential synaptic characteristics, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Owing to the electrostatically controlled barrier height in the ultrathin van der Waals heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2-0.5 V. Notably, by electrostatic tuning with a gate terminal, it can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. Such gate tunability cannot be accomplished by previously reported synaptic devices such as memristors and synaptic transistors only mimicking the two-neuronal-based synapse. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.

AB - The development of energy-efficient artificial synapses capable of manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, a new class of artificial synaptic architecture, a three-terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable-barrier tungsten selenide/graphene Schottky diode, termed as a 'synaptic barrister,' are reported. The device can implement essential synaptic characteristics, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Owing to the electrostatically controlled barrier height in the ultrathin van der Waals heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2-0.5 V. Notably, by electrostatic tuning with a gate terminal, it can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. Such gate tunability cannot be accomplished by previously reported synaptic devices such as memristors and synaptic transistors only mimicking the two-neuronal-based synapse. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.

KW - 2D materials

KW - Artificial synapse

KW - Barristor

KW - Heterostructure

KW - Memristor

KW - Neuromorphic application

UR - http://www.scopus.com/inward/record.url?scp=85050502382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050502382&partnerID=8YFLogxK

U2 - 10.1002/adma.201801447

DO - 10.1002/adma.201801447

M3 - Article

AN - SCOPUS:85050502382

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

ER -