Synthesis and characterization of heterostructured Mn3GaN 0.5/GaN nanowires

Byeongchul Ha, Hyung Chul Kim, Sung Goon Kang, Young Hun Kim, Jeong Yong Lee, Chong Yun Park, Cheol Jin Lee

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9 Citations (Scopus)

Abstract

Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn 3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the D0X line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal 4T16A1 transition of Mn 2+ (3d5), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition 4T2 → defect state.

Original languageEnglish
Pages (from-to)5398-5403
Number of pages6
JournalChemistry of Materials
Volume17
Issue number22
DOIs
Publication statusPublished - 2005 Nov 1

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

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    Ha, B., Kim, H. C., Kang, S. G., Kim, Y. H., Lee, J. Y., Park, C. Y., & Lee, C. J. (2005). Synthesis and characterization of heterostructured Mn3GaN 0.5/GaN nanowires. Chemistry of Materials, 17(22), 5398-5403. https://doi.org/10.1021/cm050557j