Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature

J. S. Jeong, J. Y. Lee, C. J. Lee, S. J. An, G. C. Yi

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129 Citations (Scopus)


High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.

Original languageEnglish
Pages (from-to)246-250
Number of pages5
JournalChemical Physics Letters
Issue number4-6
Publication statusPublished - 2004 Jan 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry


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