Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature

J. S. Jeong, J. Y. Lee, Cheol Jin Lee, S. J. An, G. C. Yi

Research output: Contribution to journalArticle

121 Citations (Scopus)

Abstract

High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.

Original languageEnglish
Pages (from-to)246-250
Number of pages5
JournalChemical Physics Letters
Volume384
Issue number4-6
DOIs
Publication statusPublished - 2004 Jan 26
Externally publishedYes

Fingerprint

Nanobelts
Physical vapor deposition
vapor deposition
catalysts
Catalysts
synthesis
shoulders
indium oxides
Temperature
indium
micrometers
purity
vapors
photoluminescence
oxygen
Indium
Oxygen vacancies
excitation
Photoluminescence
Vapors

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature. / Jeong, J. S.; Lee, J. Y.; Lee, Cheol Jin; An, S. J.; Yi, G. C.

In: Chemical Physics Letters, Vol. 384, No. 4-6, 26.01.2004, p. 246-250.

Research output: Contribution to journalArticle

@article{dff1a53ec73a46019f7c80d40e2d01dc,
title = "Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature",
abstract = "High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.",
author = "Jeong, {J. S.} and Lee, {J. Y.} and Lee, {Cheol Jin} and An, {S. J.} and Yi, {G. C.}",
year = "2004",
month = "1",
day = "26",
doi = "10.1016/j.cplett.2003.12.027",
language = "English",
volume = "384",
pages = "246--250",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "4-6",

}

TY - JOUR

T1 - Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature

AU - Jeong, J. S.

AU - Lee, J. Y.

AU - Lee, Cheol Jin

AU - An, S. J.

AU - Yi, G. C.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.

AB - High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.

UR - http://www.scopus.com/inward/record.url?scp=0347761301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347761301&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2003.12.027

DO - 10.1016/j.cplett.2003.12.027

M3 - Article

AN - SCOPUS:0347761301

VL - 384

SP - 246

EP - 250

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 4-6

ER -