Abstract
High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850°C using a simple physical vapor deposition. To synthesize the In 2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O 3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O 3 nanobelts have 〈100〉 growth direction but some nanobelts have 〈110〉 growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method.
Original language | English |
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Pages (from-to) | 246-250 |
Number of pages | 5 |
Journal | Chemical Physics Letters |
Volume | 384 |
Issue number | 4-6 |
DOIs | |
Publication status | Published - 2004 Jan 26 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry