Synthesis and dielectric properties of photoreactive polystyrene containing [1 -(3-isopropenyl-phenyl)-1 -methyl-ethyl]-carbamate in the side chain

Ju Hee Kim, Kyung Hwan Kim, Min Ju Cho, Jung Il Jin, Dong Hoon Choi, Gun Woo Hyung, Young Kwan Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Novel polystyrene derivatives comprising [l-(3-isopropenyl-phenyl)-1- methyl-ethyl]-carbamate in the side chain were synthesized as photoreactive copolymers. Poly(4-vinylphenol) was made to react with 1-(1-isocyanato-1-methyl- ethyl)-3-isopropenyl-benzene (m-TMI) and the unreacted hydroxyl groups were protected with acetyl chloride. The copolymers are highly sensitive to the radical photoinitiators that can be activated by irradiation of UV light (λ = 300-365 nm). FTIR spectroscopy was employed to monitor the structural changes in the copolymers exposed to UV irradiation. The dielectric properties of the copolymers were investigated by measuring the capacitance and calculating the permittivity as a function of frequency, along with the I-V characteristics. Their properties were compared with those of thermally crosslinkable poly(4-vinylphenol) blended with poly(melamine-co-formaldehyde), which is frequently used as a dielectric layer in organic field-effect transistors (OFETs). No significant dielectric dispersion was observed in the frequency range of 1 kHz-1 MHz. The dielectric constant was determined to be in the range of 4.2-6.0, which offers a potential for the application of these copolymers to OFET gate insulators. These soluble dielectrics exhibit good film uniformity and can also be patterned using a standard photolithographic technique.

Original languageEnglish
Pages (from-to)1710-1718
Number of pages9
JournalJournal of Polymer Science, Part A: Polymer Chemistry
Volume46
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1

Fingerprint

Urethane
Polystyrenes
Dielectric properties
Copolymers
Organic field effect transistors
Permittivity
Irradiation
Gates (transistor)
Melamine
Benzene
Formaldehyde
Ultraviolet radiation
Hydroxyl Radical
Capacitance
Spectroscopy
Derivatives
poly(4-vinylphenol)

Keywords

  • Crosslinking
  • Curing of polymers
  • Dielectric materials
  • Dielectric properties
  • Irradiation
  • Photoinitiator
  • Polystyrene
  • Radical photopolymerization

ASJC Scopus subject areas

  • Polymers and Plastics
  • Materials Chemistry

Cite this

Synthesis and dielectric properties of photoreactive polystyrene containing [1 -(3-isopropenyl-phenyl)-1 -methyl-ethyl]-carbamate in the side chain. / Kim, Ju Hee; Kim, Kyung Hwan; Cho, Min Ju; Jin, Jung Il; Choi, Dong Hoon; Hyung, Gun Woo; Kim, Young Kwan.

In: Journal of Polymer Science, Part A: Polymer Chemistry, Vol. 46, No. 5, 01.03.2008, p. 1710-1718.

Research output: Contribution to journalArticle

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abstract = "Novel polystyrene derivatives comprising [l-(3-isopropenyl-phenyl)-1- methyl-ethyl]-carbamate in the side chain were synthesized as photoreactive copolymers. Poly(4-vinylphenol) was made to react with 1-(1-isocyanato-1-methyl- ethyl)-3-isopropenyl-benzene (m-TMI) and the unreacted hydroxyl groups were protected with acetyl chloride. The copolymers are highly sensitive to the radical photoinitiators that can be activated by irradiation of UV light (λ = 300-365 nm). FTIR spectroscopy was employed to monitor the structural changes in the copolymers exposed to UV irradiation. The dielectric properties of the copolymers were investigated by measuring the capacitance and calculating the permittivity as a function of frequency, along with the I-V characteristics. Their properties were compared with those of thermally crosslinkable poly(4-vinylphenol) blended with poly(melamine-co-formaldehyde), which is frequently used as a dielectric layer in organic field-effect transistors (OFETs). No significant dielectric dispersion was observed in the frequency range of 1 kHz-1 MHz. The dielectric constant was determined to be in the range of 4.2-6.0, which offers a potential for the application of these copolymers to OFET gate insulators. These soluble dielectrics exhibit good film uniformity and can also be patterned using a standard photolithographic technique.",
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