Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate

Xing Hua Ma, Sang Hyo Kweon, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Young Sik Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.

Original languageEnglish
Pages (from-to)605-610
Number of pages6
JournalJournal of the European Ceramic Society
Volume37
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

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Dielectric properties
Powders
Microwaves
Substrates
Temperature
Microstructure
germanium oxide

Keywords

  • Advanced ceramic substrates
  • BiGeO ceramics
  • LTCC
  • Microwave dielectric properties

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate. / Ma, Xing Hua; Kweon, Sang Hyo; Nahm, Sahn; Kang, Chong Yun; Yoon, Seok Jin; Kim, Young Sik.

In: Journal of the European Ceramic Society, Vol. 37, No. 2, 01.02.2017, p. 605-610.

Research output: Contribution to journalArticle

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abstract = "During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.",
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AU - Yoon, Seok Jin

AU - Kim, Young Sik

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