Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate

Xing Hua Ma, Sang Hyo Kweon, Sahn Nahm, Chong-Yun Kang, Seok Jin Yoon, Young Sik Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.

Original languageEnglish
Pages (from-to)605-610
Number of pages6
JournalJournal of the European Ceramic Society
Volume37
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

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Dielectric properties
Powders
Microwaves
Substrates
Temperature
Microstructure
germanium oxide

Keywords

  • Advanced ceramic substrates
  • BiGeO ceramics
  • LTCC
  • Microwave dielectric properties

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate. / Ma, Xing Hua; Kweon, Sang Hyo; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok Jin; Kim, Young Sik.

In: Journal of the European Ceramic Society, Vol. 37, No. 2, 01.02.2017, p. 605-610.

Research output: Contribution to journalArticle

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AU - Yoon, Seok Jin

AU - Kim, Young Sik

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