Bi4(SiO4)3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12SiO20 second phase was formed at approximately 400°C, while the Bi2O2SiO3 and Bi 4(SiO4)3 phases started to form at 600°C. The amount of the Bi12SiO20 and Bi2O 2SiO3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi4(SiO4)3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi4(SiO 4)3 ceramics were obtained. In particular, the Bi 4(SiO4)3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of εr=14.9, Q × f=36 101 GHz and τf=-9.42 ppm/°C.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 2008 Oct|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry