Synthesis of anatase nanosheets with exposed (001) facets via chemical vapor deposition

Woo Jin Lee, Yun Mo Sung

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

High-density anatase titanium dioxide (TiO 2) nanosheets with high-energy (001) surfaces were successfully synthesized on silicon and silicon-coated substrates via chemical vapor deposition (CVD). Randomly oriented nanosheets and aligned nanosheets were synthesized depending upon gas flow conditions, and different growth mechanisms were proposed for each structure. To prevent anatase-to-rutile phase transformation, the substrate temperature was maintained as low as 450 °C, and instead, hydrogen (H 2) autoignition was induced to provide additional heat and pressure to the substrates in a moment. It is obvious that silicon vapor can suppress the growth of anatase crystals into a [001] orientation, resulting in the formation of two-dimensional (001) nanosheets. This strategy of passivating specific crystal facets using silicon can be simply extended to the tailoring of other nanosheet structures that are impossible to be obtained via general crystal growth approaches.

Original languageEnglish
Pages (from-to)5792-5795
Number of pages4
JournalCrystal Growth and Design
Volume12
Issue number11
DOIs
Publication statusPublished - 2012 Nov 7

Fingerprint

Nanosheets
anatase
Titanium dioxide
flat surfaces
Chemical vapor deposition
Silicon
vapor deposition
silicon
synthesis
Substrates
spontaneous combustion
Hydrogen
Crystals
titanium oxides
rutile
surface energy
crystals
gas flow
phase transformations
crystal growth

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Synthesis of anatase nanosheets with exposed (001) facets via chemical vapor deposition. / Lee, Woo Jin; Sung, Yun Mo.

In: Crystal Growth and Design, Vol. 12, No. 11, 07.11.2012, p. 5792-5795.

Research output: Contribution to journalArticle

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