Synthesis of CIGS absorber layers via a paste coating

Jong Won Park, Young Woo Choi, Eunjoo Lee, Oh Shim Joo, Sungho Yoon, Byoung Koun Min

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

CuInxGa1-xSe2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.

Original languageEnglish
Pages (from-to)2621-2625
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number9
DOIs
Publication statusPublished - 2009 Apr 15

Keywords

  • A1. Thin films
  • A1. X-ray diffraction
  • A3. Solar cells
  • B2. Semiconducting quarternary alloys
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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  • Cite this

    Park, J. W., Choi, Y. W., Lee, E., Joo, O. S., Yoon, S., & Min, B. K. (2009). Synthesis of CIGS absorber layers via a paste coating. Journal of Crystal Growth, 311(9), 2621-2625. https://doi.org/10.1016/j.jcrysgro.2009.02.038