Synthesis of high-purity Gap nanowires using a vapor deposition method

S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee, Cheol Jin Lee

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

High-purity gallium phosphide (GaP) nanowires were successfully synthesized on the nickel monoxide (NiO) or the cobalt monoxide (CoO) catalyzed alumina substrate by a simple vapor deposition method. To synthesize the high-purity GaP nanowires, the mixture source of gallium (Ga) and GaP powder was directly vaporized in the range of 850-1000 °C for 60 min under argon ambient. The diameter of GaP nanowires was about 38-105 nm and the length was up to several hundreds of micrometers. The GaP nanowires have a single-crystalline zinc blend structure and reveal the core-shell structure, which consists of the GaP core and the GaPO4/Ga2O3 outer layers. We demonstrate that the mixture of Ga/GaP is an ideal source for the high-yield GaP nanowires.

Original languageEnglish
Pages (from-to)717-722
Number of pages6
JournalChemical Physics Letters
Volume367
Issue number5-6
DOIs
Publication statusPublished - 2003 Jan 10
Externally publishedYes

Fingerprint

gallium phosphides
Vapor deposition
Nanowires
purity
nanowires
vapor deposition
synthesis
Gallium
gallium
gallium phosphide
Aluminum Oxide
Argon
Cobalt
Powders
Zinc
micrometers
cobalt
aluminum oxides
zinc
argon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Synthesis of high-purity Gap nanowires using a vapor deposition method. / Lyu, S. C.; Zhang, Y.; Ruh, H.; Lee, H. J.; Lee, Cheol Jin.

In: Chemical Physics Letters, Vol. 367, No. 5-6, 10.01.2003, p. 717-722.

Research output: Contribution to journalArticle

Lyu, S. C. ; Zhang, Y. ; Ruh, H. ; Lee, H. J. ; Lee, Cheol Jin. / Synthesis of high-purity Gap nanowires using a vapor deposition method. In: Chemical Physics Letters. 2003 ; Vol. 367, No. 5-6. pp. 717-722.
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