TY - JOUR
T1 - Synthesis of high-purity Gap nanowires using a vapor deposition method
AU - Lyu, S. C.
AU - Zhang, Y.
AU - Ruh, H.
AU - Lee, H. J.
AU - Lee, C. J.
N1 - Funding Information:
This work was supported by Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University.
Copyright:
Copyright 2005 Elsevier B.V., All rights reserved.
PY - 2003/1/10
Y1 - 2003/1/10
N2 - High-purity gallium phosphide (GaP) nanowires were successfully synthesized on the nickel monoxide (NiO) or the cobalt monoxide (CoO) catalyzed alumina substrate by a simple vapor deposition method. To synthesize the high-purity GaP nanowires, the mixture source of gallium (Ga) and GaP powder was directly vaporized in the range of 850-1000 °C for 60 min under argon ambient. The diameter of GaP nanowires was about 38-105 nm and the length was up to several hundreds of micrometers. The GaP nanowires have a single-crystalline zinc blend structure and reveal the core-shell structure, which consists of the GaP core and the GaPO4/Ga2O3 outer layers. We demonstrate that the mixture of Ga/GaP is an ideal source for the high-yield GaP nanowires.
AB - High-purity gallium phosphide (GaP) nanowires were successfully synthesized on the nickel monoxide (NiO) or the cobalt monoxide (CoO) catalyzed alumina substrate by a simple vapor deposition method. To synthesize the high-purity GaP nanowires, the mixture source of gallium (Ga) and GaP powder was directly vaporized in the range of 850-1000 °C for 60 min under argon ambient. The diameter of GaP nanowires was about 38-105 nm and the length was up to several hundreds of micrometers. The GaP nanowires have a single-crystalline zinc blend structure and reveal the core-shell structure, which consists of the GaP core and the GaPO4/Ga2O3 outer layers. We demonstrate that the mixture of Ga/GaP is an ideal source for the high-yield GaP nanowires.
UR - http://www.scopus.com/inward/record.url?scp=0037427742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037427742&partnerID=8YFLogxK
U2 - 10.1016/S0009-2614(02)01785-2
DO - 10.1016/S0009-2614(02)01785-2
M3 - Article
AN - SCOPUS:0037427742
SN - 0009-2614
VL - 367
SP - 717
EP - 722
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 5-6
ER -