Abstract
Silicon-containing acrylate and vinyl-ether derivatives, i.e., bis-(acryloxyethyloxy)-dimethylsilane, bis-(acryloxyethyloxy)-bis- (trimethylsilylmethyl)-silane, and bis-(vinyloxyethyloxy)- dimethylsilane, were synthesized. These materials, together with Irgacure 184 as a radical photoinitiator, were used as components for UV-curable imprint etch barrier (IEB) solutions. The effects of each material on the imprint properties of the IEB solution, such as viscosity and dry-etching resistance, were evaluated. The etch resistance of cured IEB films against oxygen plasma increased with the amount of silicon in the synthesized material. The vinyl-ether derivative had a much lower viscosity than the acrylate derivative. Formulations based on the three synthesized materials were made to find the optimum composition among them in terms of the required properties for the nanoimprinting and the following processes. The optimized formulation was applied to the nanoimprinting and subsequent lift-off process to define nanoscale features of eight chrome (Cr) metal lines with 65 nm linewidth at 250 nm pitch.
| Original language | English |
|---|---|
| Pages (from-to) | 1984-1988 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 27 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Aug 14 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Synthesis of silicon-containing materials for UV-curable imprint etch barrier solutions. / Song, Sun Sik; Kim, Sang Mook; Choi, Byung Yeon; Jung, Gun Young; Lee, Heon.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 4, 14.08.2009, p. 1984-1988.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Synthesis of silicon-containing materials for UV-curable imprint etch barrier solutions
AU - Song, Sun Sik
AU - Kim, Sang Mook
AU - Choi, Byung Yeon
AU - Jung, Gun Young
AU - Lee, Heon
PY - 2009/8/14
Y1 - 2009/8/14
N2 - Silicon-containing acrylate and vinyl-ether derivatives, i.e., bis-(acryloxyethyloxy)-dimethylsilane, bis-(acryloxyethyloxy)-bis- (trimethylsilylmethyl)-silane, and bis-(vinyloxyethyloxy)- dimethylsilane, were synthesized. These materials, together with Irgacure 184 as a radical photoinitiator, were used as components for UV-curable imprint etch barrier (IEB) solutions. The effects of each material on the imprint properties of the IEB solution, such as viscosity and dry-etching resistance, were evaluated. The etch resistance of cured IEB films against oxygen plasma increased with the amount of silicon in the synthesized material. The vinyl-ether derivative had a much lower viscosity than the acrylate derivative. Formulations based on the three synthesized materials were made to find the optimum composition among them in terms of the required properties for the nanoimprinting and the following processes. The optimized formulation was applied to the nanoimprinting and subsequent lift-off process to define nanoscale features of eight chrome (Cr) metal lines with 65 nm linewidth at 250 nm pitch.
AB - Silicon-containing acrylate and vinyl-ether derivatives, i.e., bis-(acryloxyethyloxy)-dimethylsilane, bis-(acryloxyethyloxy)-bis- (trimethylsilylmethyl)-silane, and bis-(vinyloxyethyloxy)- dimethylsilane, were synthesized. These materials, together with Irgacure 184 as a radical photoinitiator, were used as components for UV-curable imprint etch barrier (IEB) solutions. The effects of each material on the imprint properties of the IEB solution, such as viscosity and dry-etching resistance, were evaluated. The etch resistance of cured IEB films against oxygen plasma increased with the amount of silicon in the synthesized material. The vinyl-ether derivative had a much lower viscosity than the acrylate derivative. Formulations based on the three synthesized materials were made to find the optimum composition among them in terms of the required properties for the nanoimprinting and the following processes. The optimized formulation was applied to the nanoimprinting and subsequent lift-off process to define nanoscale features of eight chrome (Cr) metal lines with 65 nm linewidth at 250 nm pitch.
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U2 - 10.1116/1.3179164
DO - 10.1116/1.3179164
M3 - Article
VL - 27
SP - 1984
EP - 1988
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -