Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

In Hwan Baek, Jung Joon Pyeon, Young Geun Song, Taek Mo Chung, Hae Ryoung Kim, Seung Hyub Baek, Jin Sang Kim, Chong-Yun Kang, Ji Won Choi, Cheol Seong Hwang, Jeong Hwan Han, Seong Keun Kim

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 °C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.

Original languageEnglish
Pages (from-to)8100-8110
Number of pages11
JournalChemistry of Materials
Volume29
Issue number19
DOIs
Publication statusPublished - 2017 Oct 10

Fingerprint

Chalcogenides
Atomic layer deposition
Tin
Metals
Thin films
Hole mobility
Thin film transistors
Chemical sensors
Temperature
Melting point
Nitrogen
Carbon
Impurities
Oxygen
Crystalline materials
Fabrication
Oxidation

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Baek, I. H., Pyeon, J. J., Song, Y. G., Chung, T. M., Kim, H. R., Baek, S. H., ... Kim, S. K. (2017). Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures. Chemistry of Materials, 29(19), 8100-8110. https://doi.org/10.1021/acs.chemmater.7b01856

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures. / Baek, In Hwan; Pyeon, Jung Joon; Song, Young Geun; Chung, Taek Mo; Kim, Hae Ryoung; Baek, Seung Hyub; Kim, Jin Sang; Kang, Chong-Yun; Choi, Ji Won; Hwang, Cheol Seong; Han, Jeong Hwan; Kim, Seong Keun.

In: Chemistry of Materials, Vol. 29, No. 19, 10.10.2017, p. 8100-8110.

Research output: Contribution to journalArticle

Baek, IH, Pyeon, JJ, Song, YG, Chung, TM, Kim, HR, Baek, SH, Kim, JS, Kang, C-Y, Choi, JW, Hwang, CS, Han, JH & Kim, SK 2017, 'Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures', Chemistry of Materials, vol. 29, no. 19, pp. 8100-8110. https://doi.org/10.1021/acs.chemmater.7b01856
Baek IH, Pyeon JJ, Song YG, Chung TM, Kim HR, Baek SH et al. Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures. Chemistry of Materials. 2017 Oct 10;29(19):8100-8110. https://doi.org/10.1021/acs.chemmater.7b01856
Baek, In Hwan ; Pyeon, Jung Joon ; Song, Young Geun ; Chung, Taek Mo ; Kim, Hae Ryoung ; Baek, Seung Hyub ; Kim, Jin Sang ; Kang, Chong-Yun ; Choi, Ji Won ; Hwang, Cheol Seong ; Han, Jeong Hwan ; Kim, Seong Keun. / Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures. In: Chemistry of Materials. 2017 ; Vol. 29, No. 19. pp. 8100-8110.
@article{06b5dc2f903e4834b4c183eb6b243ef6,
title = "Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures",
abstract = "Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 °C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.",
author = "Baek, {In Hwan} and Pyeon, {Jung Joon} and Song, {Young Geun} and Chung, {Taek Mo} and Kim, {Hae Ryoung} and Baek, {Seung Hyub} and Kim, {Jin Sang} and Chong-Yun Kang and Choi, {Ji Won} and Hwang, {Cheol Seong} and Han, {Jeong Hwan} and Kim, {Seong Keun}",
year = "2017",
month = "10",
day = "10",
doi = "10.1021/acs.chemmater.7b01856",
language = "English",
volume = "29",
pages = "8100--8110",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "19",

}

TY - JOUR

T1 - Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

AU - Baek, In Hwan

AU - Pyeon, Jung Joon

AU - Song, Young Geun

AU - Chung, Taek Mo

AU - Kim, Hae Ryoung

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

AU - Kang, Chong-Yun

AU - Choi, Ji Won

AU - Hwang, Cheol Seong

AU - Han, Jeong Hwan

AU - Kim, Seong Keun

PY - 2017/10/10

Y1 - 2017/10/10

N2 - Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 °C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.

AB - Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 °C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85032220250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032220250&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.7b01856

DO - 10.1021/acs.chemmater.7b01856

M3 - Article

AN - SCOPUS:85032220250

VL - 29

SP - 8100

EP - 8110

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 19

ER -