Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

In Hwan Baek, Jung Joon Pyeon, Young Geun Song, Taek Mo Chung, Hae Ryoung Kim, Seung Hyub Baek, Jin Sang Kim, Chong Yun Kang, Ji Won Choi, Cheol Seong Hwang, Jeong Hwan Han, Seong Keun Kim

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 °C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 °C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.

Original languageEnglish
Pages (from-to)8100-8110
Number of pages11
JournalChemistry of Materials
Issue number19
Publication statusPublished - 2017 Oct 10

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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