Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

Cheol Jin Lee, Dae Woon Kim, Tae Jae Lee, Young Chul Choi, Young Soo Park, Won Seok Kim, Young Hee Lee, Won Bong Choi, Nae Sung Lee, Jong Min Kim, Yong Gak Choi, Soo Chang Yu

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Abstract

We have synthesized carbon nanotubes by thermal chemical vapor deposition of C2H2 on transition metal-coated silicon substrates. Multiwalled carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH3 pretreatment is a crucial step for the nanotube growth prior to the reaction of C2H2 gas. We will demonstrate that the diameters of carbon nanotubes can be controlled by applying the different transition metals.

Original languageEnglish
Pages (from-to)1721-1723
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number12
DOIs
Publication statusPublished - 1999 Sep 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Lee, C. J., Kim, D. W., Lee, T. J., Choi, Y. C., Park, Y. S., Kim, W. S., Lee, Y. H., Choi, W. B., Lee, N. S., Kim, J. M., Choi, Y. G., & Yu, S. C. (1999). Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition. Applied Physics Letters, 75(12), 1721-1723. https://doi.org/10.1063/1.124837