Systematic and consistent ferromagnetism in InMnP: Zn bilayers for various Mn concentrations and annealing temperatures

Yoon Shon, Im Taek Yoon, Sejoon Lee, Y. H. Kwon, Chong S. Yoon, C. S. Park, Cheol Jin Lee, Dong Jin Lee, H. S. Kim, T. W. Kang

Research output: Contribution to journalArticle

Abstract

The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.

Original languageEnglish
Pages (from-to)2158-2164
Number of pages7
JournalJournal of the Korean Physical Society
Volume63
Issue number11
DOIs
Publication statusPublished - 2013 Dec 23

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ferromagnetism
interference
annealing
metalorganic chemical vapor deposition
Curie temperature
precipitates
x ray diffraction
molecular beam epitaxy
hysteresis
magnetic properties
transmission electron microscopy
temperature

Keywords

  • Chemical vapor deposition (CVD)
  • InP
  • Molecular beam epitaxy (MBE)
  • Semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Systematic and consistent ferromagnetism in InMnP : Zn bilayers for various Mn concentrations and annealing temperatures. / Shon, Yoon; Yoon, Im Taek; Lee, Sejoon; Kwon, Y. H.; Yoon, Chong S.; Park, C. S.; Lee, Cheol Jin; Lee, Dong Jin; Kim, H. S.; Kang, T. W.

In: Journal of the Korean Physical Society, Vol. 63, No. 11, 23.12.2013, p. 2158-2164.

Research output: Contribution to journalArticle

Shon, Yoon ; Yoon, Im Taek ; Lee, Sejoon ; Kwon, Y. H. ; Yoon, Chong S. ; Park, C. S. ; Lee, Cheol Jin ; Lee, Dong Jin ; Kim, H. S. ; Kang, T. W. / Systematic and consistent ferromagnetism in InMnP : Zn bilayers for various Mn concentrations and annealing temperatures. In: Journal of the Korean Physical Society. 2013 ; Vol. 63, No. 11. pp. 2158-2164.
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T2 - Zn bilayers for various Mn concentrations and annealing temperatures

AU - Shon, Yoon

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AU - Kwon, Y. H.

AU - Yoon, Chong S.

AU - Park, C. S.

AU - Lee, Cheol Jin

AU - Lee, Dong Jin

AU - Kim, H. S.

AU - Kang, T. W.

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N2 - The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.

AB - The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.

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