Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors

Cheol Jin Cho, Myoung Sub Noh, Woo Chul Lee, Cheol Hyun An, Chong-Yun Kang, Cheol Seong Hwang, Seong Keun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 °C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs.

Original languageEnglish
Pages (from-to)9405-9411
Number of pages7
JournalJournal of Materials Chemistry C
Volume5
Issue number36
DOIs
Publication statusPublished - 2017

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Precious metals
Oxides
Capacitors
Data storage equipment
Electrodes
Annealing
Permittivity
Gases
Dielectric films
Chemical stability
Leakage currents
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Cho, C. J., Noh, M. S., Lee, W. C., An, C. H., Kang, C-Y., Hwang, C. S., & Kim, S. K. (2017). Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors. Journal of Materials Chemistry C, 5(36), 9405-9411. https://doi.org/10.1039/c7tc03467a

Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors. / Cho, Cheol Jin; Noh, Myoung Sub; Lee, Woo Chul; An, Cheol Hyun; Kang, Chong-Yun; Hwang, Cheol Seong; Kim, Seong Keun.

In: Journal of Materials Chemistry C, Vol. 5, No. 36, 2017, p. 9405-9411.

Research output: Contribution to journalArticle

Cho, CJ, Noh, MS, Lee, WC, An, CH, Kang, C-Y, Hwang, CS & Kim, SK 2017, 'Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors', Journal of Materials Chemistry C, vol. 5, no. 36, pp. 9405-9411. https://doi.org/10.1039/c7tc03467a
Cho, Cheol Jin ; Noh, Myoung Sub ; Lee, Woo Chul ; An, Cheol Hyun ; Kang, Chong-Yun ; Hwang, Cheol Seong ; Kim, Seong Keun. / Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors. In: Journal of Materials Chemistry C. 2017 ; Vol. 5, No. 36. pp. 9405-9411.
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