Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors

Cheol Jin Cho, Myoung Sub Noh, Woo Chul Lee, Cheol Hyun An, Chong-Yun Kang, Cheol Seong Hwang, Seong Keun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 °C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs.

Original languageEnglish
Pages (from-to)9405-9411
Number of pages7
JournalJournal of Materials Chemistry C
Volume5
Issue number36
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Ta-Doped SnO<sub>2</sub> as a reduction-resistant oxide electrode for DRAM capacitors'. Together they form a unique fingerprint.

Cite this