Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

Sang Myeong Lee, Hyojung Kim, Dong Hoe Kim, Won Bin Kim, Jae Myeong Lee, Jaeho Choi, Hyunjung Shin, Gill Sang Han, Ho Won Jang, Hyun Suk Jung

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Hybrid organic-inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices due to their low cost, low operation voltage, high on/off ratio, and excellent mechanical properties. However, the HP-based RS memory devices continue to face several challenges owing to the short endurance and stability of the HP film. Herein, two-dimensional/three-dimensional (2D/3D) perovskite heterojunction films were prepared via a low-temperature all-solution process and their RS behavior was investigated for the first time. The 2D/3D perovskite RS devices exhibited excellent performance with an endurance of 2700 cycles, a high on/off ratio of 106, and an operation speed of 640 μs. The calculated thermally assisted ion hopping activation energy and the results of the time-of-flight secondary ion mass spectroscopy demonstrated that the 2D perovskite layer could efficiently prevent the Ag ion migration into the 3D perovskite film. Moreover, we found that owing to its high thermal conductivity, the 2D perovskite can control the rupture of the Ag conductive filament. Thus, the 2D perovskite layer enhances endurance by controlling both Ag migration and filament rupture. Hence, this study provides an alternate strategy for improving endurance of HP-based RS memory devices.

Original languageEnglish
Pages (from-to)17039-17045
Number of pages7
JournalACS Applied Materials and Interfaces
Volume12
Issue number14
DOIs
Publication statusPublished - 2020 Apr 8
Externally publishedYes

Keywords

  • 2D/3D heterointerface
  • endurance
  • filament rupture
  • halide perovskites
  • resistive switching

ASJC Scopus subject areas

  • Materials Science(all)

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