Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device

Donghyun Kim, Ju Hyun Park, Dong Su Jeon, Tukaram D. Dongale, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Sneak path current suppression is indispensable for realizing resistive random-access memory-based high-density crossbar array (CBA) architectures. Therefore, we present a Pt/Ta2O5-y/Ta/Pt nonvolatile resistive switching (RS) device and a selector device with a Pt/Ag-doped ZrNx/Pt configuration, representing bidirectional threshold switching (TS). The cross-sections of both devices were investigated via transmission electron microscopy, and the variation in the Ag content was examined via energy-dispersive X-ray spectroscopy. The radio frequency-sputtered RS device exhibited good switching voltage uniformity (ΔVSET and ΔVRESET ≈ ±0.15) and a large memory window (∼5 × 102). The selector device was developed via co-sputtering of Ag and ZrN, and the optimized device exhibited excellent selectivity (>106), a very low OFF-current (∼10−11 A), a very short delay time (∼70 ns), and stable TS characteristics. On the basis of the optimized structure, a one-selector one-memory device was fabricated by stacking these two devices, and its performance was investigated. Equivalent circuit analysis of the proposed one-selector one-resistor (1S1R) devices in a CBA configuration was performed, and the optimal array size was estimated to demonstrate the applicability of the proposed structure. The results indicated that the maximum permissible crossbar array size of the 1S1R device with the Pt/Ag-doped ZrNx/Pt/Ta2O5-y/Ta/Pt structure was 2.56 × 1014 (N2, N = 1.6 × 107).

Original languageEnglish
Article number157261
JournalJournal of Alloys and Compounds
Publication statusPublished - 2021 Feb 15


  • Crossbar array
  • Electrochemical material
  • High selectivity
  • Resistive switching
  • Sneak path current
  • Threshold switching

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device'. Together they form a unique fingerprint.

Cite this