Te doping of GaInP

Ordering and step structure

S. H. Lee, C. Y. Fetzer, G. B. Stringfellow, D. H. Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A model is developed which rationalizes the change in step structure caused by Te doping. Loss of CuPT ordering are caused by high adatom sticking coefficient at the monolayer [100] steps formed due to Te doping. The elimination of 3D mounds on the surface during growth are also observed, since steps are present due to unintentional substrate misorientation. The change in the relative sticking coefficients at up and down steps due to the transition from bilayer steps terminated by (2×2) reconstructed surfaces to monolayer steps are responsible for the reduction in step bunching.

Original languageEnglish
Pages (from-to)3590-3596
Number of pages7
JournalJournal of Applied Physics
Volume85
Issue number7
Publication statusPublished - 1999 Apr 1
Externally publishedYes

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bunching
coefficients
misalignment
adatoms
elimination

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S. H., Fetzer, C. Y., Stringfellow, G. B., Lee, D. H., & Seong, T. Y. (1999). Te doping of GaInP: Ordering and step structure. Journal of Applied Physics, 85(7), 3590-3596.

Te doping of GaInP : Ordering and step structure. / Lee, S. H.; Fetzer, C. Y.; Stringfellow, G. B.; Lee, D. H.; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 85, No. 7, 01.04.1999, p. 3590-3596.

Research output: Contribution to journalArticle

Lee, SH, Fetzer, CY, Stringfellow, GB, Lee, DH & Seong, TY 1999, 'Te doping of GaInP: Ordering and step structure', Journal of Applied Physics, vol. 85, no. 7, pp. 3590-3596.
Lee SH, Fetzer CY, Stringfellow GB, Lee DH, Seong TY. Te doping of GaInP: Ordering and step structure. Journal of Applied Physics. 1999 Apr 1;85(7):3590-3596.
Lee, S. H. ; Fetzer, C. Y. ; Stringfellow, G. B. ; Lee, D. H. ; Seong, Tae Yeon. / Te doping of GaInP : Ordering and step structure. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 7. pp. 3590-3596.
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