Te doping of GaInP: Ordering and step structure

S. H. Lee, C. Y. Fetzer, G. B. Stringfellow, D. H. Lee, T. Y. Seong

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A model is developed which rationalizes the change in step structure caused by Te doping. Loss of CuPT ordering are caused by high adatom sticking coefficient at the monolayer [100] steps formed due to Te doping. The elimination of 3D mounds on the surface during growth are also observed, since steps are present due to unintentional substrate misorientation. The change in the relative sticking coefficients at up and down steps due to the transition from bilayer steps terminated by (2×2) reconstructed surfaces to monolayer steps are responsible for the reduction in step bunching.

Original languageEnglish
Pages (from-to)3590-3596
Number of pages7
JournalJournal of Applied Physics
Volume85
Issue number7
DOIs
Publication statusPublished - 1999 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, S. H., Fetzer, C. Y., Stringfellow, G. B., Lee, D. H., & Seong, T. Y. (1999). Te doping of GaInP: Ordering and step structure. Journal of Applied Physics, 85(7), 3590-3596. https://doi.org/10.1063/1.369719