Technological issues for high-density MRAM development

Taewan Kim, Young Keun Kim, Wanjun Park

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

Original languageEnglish
Pages (from-to)232-236
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume282
Issue number1-3
DOIs
Publication statusPublished - 2004 Nov
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan, Province of China
Duration: 2003 Nov 132003 Nov 16

Keywords

  • Magnetic tunnel junction
  • Magnetoreistance
  • Magnetoresistive random access memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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