Technological issues for high-density MRAM development

Taewan Kim, Young-geun Kim, Wanjun Park

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

Original languageEnglish
Pages (from-to)232-236
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume282
Issue number1-3
DOIs
Publication statusPublished - 2004 Nov 1

Fingerprint

MRAM devices
random access memory
cells
Data storage equipment
endurance
Durability
hardness
Hardness
high speed
Radiation
radiation

Keywords

  • Magnetic tunnel junction
  • Magnetoreistance
  • Magnetoresistive random access memory

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Technological issues for high-density MRAM development. / Kim, Taewan; Kim, Young-geun; Park, Wanjun.

In: Journal of Magnetism and Magnetic Materials, Vol. 282, No. 1-3, 01.11.2004, p. 232-236.

Research output: Contribution to journalArticle

@article{a9cd2c1f4b6b4e58b13e86ecbec41a44,
title = "Technological issues for high-density MRAM development",
abstract = "The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.",
keywords = "Magnetic tunnel junction, Magnetoreistance, Magnetoresistive random access memory",
author = "Taewan Kim and Young-geun Kim and Wanjun Park",
year = "2004",
month = "11",
day = "1",
doi = "10.1016/j.jmmm.2004.04.052",
language = "English",
volume = "282",
pages = "232--236",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Technological issues for high-density MRAM development

AU - Kim, Taewan

AU - Kim, Young-geun

AU - Park, Wanjun

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

AB - The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

KW - Magnetic tunnel junction

KW - Magnetoreistance

KW - Magnetoresistive random access memory

UR - http://www.scopus.com/inward/record.url?scp=5744246336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5744246336&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.04.052

DO - 10.1016/j.jmmm.2004.04.052

M3 - Article

AN - SCOPUS:5744246336

VL - 282

SP - 232

EP - 236

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

ER -