TEM study of defect structure in GaAs film on Si substrate

Sahn Nahm, Hee Tae Lee, Sang Gi Kim, Kyoung Ik Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the GaAs buffer layer deposited on Si substrate at 80 °C and annealed at 300 °C for 10 min, the size of most GaAs islands was observed as approximately 10 nm but large islands (approximately 40 nm) were also seen. According to the calculation of spacing of moire fringes, large GaAs islands are considered to be rotated about 4° with respect to the Si substrate normal. However, for the main GaAs film overgrown on the GaAs buffer layer at 580 °C, moire fringes with the spacing of 5 nm (GaAs film without rotation) completely covered the surface of Si substrate. Misfit dislocations and stacking faults were already formed at the growth stage of buffer layer. Stacking faults and misfit dislocations consisting of Lomer and 60° dislocations were observed in GaAs films grown at 580 °C. However, after rapid thermal annealing at 900 °C for 10 sec, only Lomer dislocations with 1/2[110] and 1/2[-110] Burgers vectors were observed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages457-462
Number of pages6
Volume325
ISBN (Print)1558992243
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 1

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period93/11/2993/12/1

Fingerprint

Defect structures
Buffer layers
Dislocations (crystals)
Moire fringes
Stacking faults
Transmission electron microscopy
Substrates
Burgers vector
Rapid thermal annealing
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nahm, S., Lee, H. T., Kim, S. G., & Cho, K. I. (1994). TEM study of defect structure in GaAs film on Si substrate. In Materials Research Society Symposium Proceedings (Vol. 325, pp. 457-462). Pittsburgh, PA, United States: Publ by Materials Research Society.

TEM study of defect structure in GaAs film on Si substrate. / Nahm, Sahn; Lee, Hee Tae; Kim, Sang Gi; Cho, Kyoung Ik.

Materials Research Society Symposium Proceedings. Vol. 325 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. p. 457-462.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nahm, S, Lee, HT, Kim, SG & Cho, KI 1994, TEM study of defect structure in GaAs film on Si substrate. in Materials Research Society Symposium Proceedings. vol. 325, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 457-462, Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA, 93/11/29.
Nahm S, Lee HT, Kim SG, Cho KI. TEM study of defect structure in GaAs film on Si substrate. In Materials Research Society Symposium Proceedings. Vol. 325. Pittsburgh, PA, United States: Publ by Materials Research Society. 1994. p. 457-462
Nahm, Sahn ; Lee, Hee Tae ; Kim, Sang Gi ; Cho, Kyoung Ik. / TEM study of defect structure in GaAs film on Si substrate. Materials Research Society Symposium Proceedings. Vol. 325 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. pp. 457-462
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