TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate

T. Y. Seong, A. G. Norman, J. L. Hutchison, G. R. Booker, A. G. Cullis, S. J. Bass, L. L. Taylor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In0.53Ga0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages463-468
Number of pages6
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991
Externally publishedYes
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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