TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers

Dependence on growth temperature and growth rate

Tae Yeon Seong, A. G. Norman, J. L. Hutchison, G. R. Booker, A. G. Cullis, S. J. Bass, L. L. Taylor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In 0.53Ga 0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages463-468
Number of pages6
Volume117
Publication statusPublished - 1991
Externally publishedYes
EventMicroscopy of Semiconducting Materials, 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Other

OtherMicroscopy of Semiconducting Materials, 1991
CityOxford, Engl
Period91/3/2591/3/28

Fingerprint

transferred electron devices
High resolution electron microscopy
Metallorganic chemical vapor deposition
Growth temperature
metalorganic chemical vapor deposition
Transmission electron microscopy
transmission electron microscopy
antiphase boundaries
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

Cite this

Seong, T. Y., Norman, A. G., Hutchison, J. L., Booker, G. R., Cullis, A. G., Bass, S. J., & Taylor, L. L. (1991). TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers: Dependence on growth temperature and growth rate. In Institute of Physics Conference Series (Vol. 117, pp. 463-468). Publ by IOP Publishing Ltd.

TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers : Dependence on growth temperature and growth rate. / Seong, Tae Yeon; Norman, A. G.; Hutchison, J. L.; Booker, G. R.; Cullis, A. G.; Bass, S. J.; Taylor, L. L.

Institute of Physics Conference Series. Vol. 117 Publ by IOP Publishing Ltd, 1991. p. 463-468.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seong, TY, Norman, AG, Hutchison, JL, Booker, GR, Cullis, AG, Bass, SJ & Taylor, LL 1991, TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers: Dependence on growth temperature and growth rate. in Institute of Physics Conference Series. vol. 117, Publ by IOP Publishing Ltd, pp. 463-468, Microscopy of Semiconducting Materials, 1991, Oxford, Engl, 91/3/25.
Seong TY, Norman AG, Hutchison JL, Booker GR, Cullis AG, Bass SJ et al. TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers: Dependence on growth temperature and growth rate. In Institute of Physics Conference Series. Vol. 117. Publ by IOP Publishing Ltd. 1991. p. 463-468
Seong, Tae Yeon ; Norman, A. G. ; Hutchison, J. L. ; Booker, G. R. ; Cullis, A. G. ; Bass, S. J. ; Taylor, L. L. / TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In xGa 1-xAs layers : Dependence on growth temperature and growth rate. Institute of Physics Conference Series. Vol. 117 Publ by IOP Publishing Ltd, 1991. pp. 463-468
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abstract = "We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In 0.53Ga 0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.",
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AU - Hutchison, J. L.

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AB - We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In 0.53Ga 0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

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