Temperature-adaptive back-bias voltage generator for an RCAT pseudo SRAM

Jong Pil Son, Hyun Geun Byun, Young Hyun Jun, Kinam Kim, Soo Won Kim

Research output: Contribution to journalArticle

Abstract

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 mV/°C, and its static current consumption is found to be only 0.83 μA@2.0 V.

Original languageEnglish
Pages (from-to)406-413
Number of pages8
JournalETRI Journal
Volume32
Issue number3
DOIs
Publication statusPublished - 2010 Jun

Keywords

  • Back-bias voltage generator
  • Memories
  • Pseudo SRAM
  • RCAT
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering

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  • Cite this

    Son, J. P., Byun, H. G., Jun, Y. H., Kim, K., & Kim, S. W. (2010). Temperature-adaptive back-bias voltage generator for an RCAT pseudo SRAM. ETRI Journal, 32(3), 406-413. https://doi.org/10.4218/etrij.10.0109.0366