Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Sangsig Kim, S. J. Rhee, J. O. White, A. M. Mitofsky, X. Li, G. C. Papen, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume81
Issue number1-3
DOIs
Publication statusPublished - 2001 Apr 24

Fingerprint

Photoluminescence
photoluminescence
temperature dependence
Photoluminescence spectroscopy
Temperature
Quenching
quenching
room temperature
spectroscopy
temperature
augmentation

Keywords

  • Er-implanted undoped and Mg-doped GaN
  • Temperature dependence of photoluminescence spectra

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN. / Kim, Sangsig; Rhee, S. J.; White, J. O.; Mitofsky, A. M.; Li, X.; Papen, G. C.; Coleman, J. J.; Bishop, S. G.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, No. 1-3, 24.04.2001, p. 136-139.

Research output: Contribution to journalArticle

Kim, Sangsig ; Rhee, S. J. ; White, J. O. ; Mitofsky, A. M. ; Li, X. ; Papen, G. C. ; Coleman, J. J. ; Bishop, S. G. / Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001 ; Vol. 81, No. 1-3. pp. 136-139.
@article{ef55cbcd60524dbc924f6c5c1ac95813,
title = "Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN",
abstract = "Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.",
keywords = "Er-implanted undoped and Mg-doped GaN, Temperature dependence of photoluminescence spectra",
author = "Sangsig Kim and Rhee, {S. J.} and White, {J. O.} and Mitofsky, {A. M.} and X. Li and Papen, {G. C.} and Coleman, {J. J.} and Bishop, {S. G.}",
year = "2001",
month = "4",
day = "24",
doi = "10.1016/S0921-5107(00)00694-2",
language = "English",
volume = "81",
pages = "136--139",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

AU - Kim, Sangsig

AU - Rhee, S. J.

AU - White, J. O.

AU - Mitofsky, A. M.

AU - Li, X.

AU - Papen, G. C.

AU - Coleman, J. J.

AU - Bishop, S. G.

PY - 2001/4/24

Y1 - 2001/4/24

N2 - Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

AB - Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

KW - Er-implanted undoped and Mg-doped GaN

KW - Temperature dependence of photoluminescence spectra

UR - http://www.scopus.com/inward/record.url?scp=0035942412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035942412&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00694-2

DO - 10.1016/S0921-5107(00)00694-2

M3 - Article

VL - 81

SP - 136

EP - 139

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -