Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

S. Kim, S. J. Rhee, J. O. White, A. M. Mitofsky, X. Li, G. C. Papen, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume81
Issue number1-3
DOIs
Publication statusPublished - 2001 Apr 24

    Fingerprint

Keywords

  • Er-implanted undoped and Mg-doped GaN
  • Temperature dependence of photoluminescence spectra

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this