Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Tae Hwan Lee, Hyun Cheol Koo, Kyung Ho Kim, Hyung jun Kim, Joonyeon Chang, Suk Hee Han, Jinki Hong, Sang Ho Lim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

Original languageEnglish
Pages (from-to)3795-3798
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume321
Issue number22
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

hybrid structures
injection
temperature dependence
tunnels
Tunnels
Temperature
Polarization
polarization
temperature
Electric fields
gallium arsenide
electric fields
room temperature

Keywords

  • Interface resistance
  • Schottky-tunnel-barrier
  • Spin injection
  • Spin injection efficiency

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure. / Lee, Tae Hwan; Koo, Hyun Cheol; Kim, Kyung Ho; Kim, Hyung jun; Chang, Joonyeon; Han, Suk Hee; Hong, Jinki; Lim, Sang Ho.

In: Journal of Magnetism and Magnetic Materials, Vol. 321, No. 22, 01.11.2009, p. 3795-3798.

Research output: Contribution to journalArticle

Lee, Tae Hwan ; Koo, Hyun Cheol ; Kim, Kyung Ho ; Kim, Hyung jun ; Chang, Joonyeon ; Han, Suk Hee ; Hong, Jinki ; Lim, Sang Ho. / Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure. In: Journal of Magnetism and Magnetic Materials. 2009 ; Vol. 321, No. 22. pp. 3795-3798.
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AU - Lee, Tae Hwan

AU - Koo, Hyun Cheol

AU - Kim, Kyung Ho

AU - Kim, Hyung jun

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Hong, Jinki

AU - Lim, Sang Ho

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AB - The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

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