Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Tae Hwan Lee, Hyun Cheol Koo, Kyung Ho Kim, Hyung jun Kim, Joonyeon Chang, Suk Hee Han, Jinki Hong, Sang Ho Lim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

Original languageEnglish
Pages (from-to)3795-3798
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume321
Issue number22
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • Interface resistance
  • Schottky-tunnel-barrier
  • Spin injection
  • Spin injection efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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