Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence

Sung Kim, Yong Min Park, Suk Ho Choi, Kyung Joong Kim, Dong Hoon Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.

Original languageEnglish
Article number005
Pages (from-to)1339-1342
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume40
Issue number5
DOIs
Publication statusPublished - 2007 Mar 7

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continuous radiation
Photoluminescence
Multilayers
photoluminescence
Nanocrystals
nanocrystals
Temperature
temperature
Ion beams
decay rates
Sputtering
sputtering
ion beams
wafers
Defects
temperature dependence
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence. / Kim, Sung; Min Park, Yong; Choi, Suk Ho; Joong Kim, Kyung; Choi, Dong Hoon.

In: Journal of Physics D: Applied Physics, Vol. 40, No. 5, 005, 07.03.2007, p. 1339-1342.

Research output: Contribution to journalArticle

@article{9df01d88192c4f70bde9782459bed989,
title = "Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence",
abstract = "50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.",
author = "Sung Kim and {Min Park}, Yong and Choi, {Suk Ho} and {Joong Kim}, Kyung and Choi, {Dong Hoon}",
year = "2007",
month = "3",
day = "7",
doi = "10.1088/0022-3727/40/5/005",
language = "English",
volume = "40",
pages = "1339--1342",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence

AU - Kim, Sung

AU - Min Park, Yong

AU - Choi, Suk Ho

AU - Joong Kim, Kyung

AU - Choi, Dong Hoon

PY - 2007/3/7

Y1 - 2007/3/7

N2 - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.

AB - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.

UR - http://www.scopus.com/inward/record.url?scp=33947658429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947658429&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/40/5/005

DO - 10.1088/0022-3727/40/5/005

M3 - Article

AN - SCOPUS:33947658429

VL - 40

SP - 1339

EP - 1342

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 5

M1 - 005

ER -