Abstract
50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.
| Original language | English |
|---|---|
| Article number | 005 |
| Pages (from-to) | 1339-1342 |
| Number of pages | 4 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 40 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2007 Mar 7 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence. / Kim, Sung; Min Park, Yong; Choi, Suk Ho; Joong Kim, Kyung; Choi, Dong Hoon.
In: Journal of Physics D: Applied Physics, Vol. 40, No. 5, 005, 07.03.2007, p. 1339-1342.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence
AU - Kim, Sung
AU - Min Park, Yong
AU - Choi, Suk Ho
AU - Joong Kim, Kyung
AU - Choi, Dong Hoon
PY - 2007/3/7
Y1 - 2007/3/7
N2 - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.
AB - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.
UR - http://www.scopus.com/inward/record.url?scp=33947658429&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947658429&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/40/5/005
DO - 10.1088/0022-3727/40/5/005
M3 - Article
AN - SCOPUS:33947658429
VL - 40
SP - 1339
EP - 1342
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 5
M1 - 005
ER -