In this study, the electronic properties of sintered HgTe nanoparticles are characterized to determine the type of charge carrier within them, and to investigate their gate effects as a function of temperature. HgTe nanoparticles synthesized by the colloidal method were first deposited on thermally oxidized Si substrates by spin-coating, and then sintered at 150°C. The sintered nanoparticles were determined to be p-type by analyzing the drain current and drain-source voltage (Id-Vds) relationship as a function of the gate voltage (Vg). The field-effect mobilities of the holes in the sintered HgTe nanoparticles are estimated to be 0.041, 0.036, and 0.022 cm2/(V·s) at 60, 180, and 300 K, respectively. The variation in the slope of the Id-Vds curve as a function of V g becomes more distinctive as temperature decreases. At temperatures lower than 140 K, an inversion mode was observed for the channel of the sintered nanoparticles.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|Publication status||Published - 2006 Sep 7|
- Gate effect
ASJC Scopus subject areas
- Physics and Astronomy(all)