Temperature dependent I-V characteristics of plasma hydrogenated Poly-Si TFTs in the low voltage region

H. K. Jang, Cheol Eui Lee, Gug Seon Choi, Yoon Jong Lee, S. J. Noh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study presents an investigation of the current-voltage characteristics of polycrystalline-silicon p-channel metal-oxide-semiconductor thin film transistors (Poly-Si PMOS TFTs) for static random access memory (SRAM) loads in the low supply voltage region with various operating temperatures. The TFT has a bottom-gate lightly doped offset (LDO) structure and has been designed for 5 V operation. Currents are measured at the low voltage and low temperature region. Using this result, the current-voltage characteristic relations of the TFT are obtained as a function of temperature. We suggest that combination of low I on at the low voltage and low temperature region and the non-uniform characteristics of the TFT can cause memory cell data instabilities such as static hold failures.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1

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low voltage
electric potential
random access memory
operating temperature
metal oxide semiconductors
temperature
transistors
causes
silicon
thin films
cells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Temperature dependent I-V characteristics of plasma hydrogenated Poly-Si TFTs in the low voltage region. / Jang, H. K.; Lee, Cheol Eui; Choi, Gug Seon; Lee, Yoon Jong; Noh, S. J.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

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AU - Noh, S. J.

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