Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test npn SiGe/Si heterojunction bipolar transistors (HBT's) with pseudomorphic p-type Sii-a-Ge (0. 2 < x < 0. 4) base layers. Magnetotransport measurements were performed on the fabricated HBT's to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cut-off frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique. Heterojunction bipolar transistor, minority carrier mobility, SiGe alloy.

Original languageEnglish
Pages (from-to)883-890
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume47
Issue number4
DOIs
Publication statusPublished - 2000 Dec 1
Externally publishedYes

Fingerprint

Electron mobility
minorities
electron mobility
Heterojunction bipolar transistors
bipolar transistors
Galvanomagnetic effects
heterojunctions
Temperature
temperature
Carrier mobility
Cutoff frequency
minority carriers
carrier mobility
Chemical analysis
cut-off
trends
augmentation
room temperature
estimates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers. / Rieh, Jae-Sung.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 4, 01.12.2000, p. 883-890.

Research output: Contribution to journalArticle

@article{a19be561751e40538a18b2359d917d60,
title = "Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers",
abstract = "Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test npn SiGe/Si heterojunction bipolar transistors (HBT's) with pseudomorphic p-type Sii-a-Ge (0. 2 < x < 0. 4) base layers. Magnetotransport measurements were performed on the fabricated HBT's to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cut-off frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique. Heterojunction bipolar transistor, minority carrier mobility, SiGe alloy.",
author = "Jae-Sung Rieh",
year = "2000",
month = "12",
day = "1",
doi = "10.1109/16.831009",
language = "English",
volume = "47",
pages = "883--890",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers

AU - Rieh, Jae-Sung

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test npn SiGe/Si heterojunction bipolar transistors (HBT's) with pseudomorphic p-type Sii-a-Ge (0. 2 < x < 0. 4) base layers. Magnetotransport measurements were performed on the fabricated HBT's to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cut-off frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique. Heterojunction bipolar transistor, minority carrier mobility, SiGe alloy.

AB - Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test npn SiGe/Si heterojunction bipolar transistors (HBT's) with pseudomorphic p-type Sii-a-Ge (0. 2 < x < 0. 4) base layers. Magnetotransport measurements were performed on the fabricated HBT's to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cut-off frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique. Heterojunction bipolar transistor, minority carrier mobility, SiGe alloy.

UR - http://www.scopus.com/inward/record.url?scp=0033876582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033876582&partnerID=8YFLogxK

U2 - 10.1109/16.831009

DO - 10.1109/16.831009

M3 - Article

VL - 47

SP - 883

EP - 890

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

ER -