Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Jae Ryoung Kim; Byoung Kye Kim; I. J. Lee; Ju Jin Kim; Jinhee Kim; Seung Chul Lyu; Cheol Jin Lee

doi:10.1103/PhysRevB.69.233303

Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Jae Ryoung Kim, Byoung Kye Kim, I. J. Lee, Ju Jin Kim, Jinhee Kim, Seung Chul Lyu, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

Original language	English
Article number	233303
Pages (from-to)	233303-1-233303-4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.69.233303
Publication status	Published - 2004 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.",

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AU - Kim, Jinhee

AU - Lyu, Seung Chul

AU - Lee, Cheol Jin

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AB - We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

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Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Abstract

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