We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004 Jun|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics