Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Jae Ryoung Kim, Byoung Kye Kim, I. J. Lee, Ju Jin Kim, Jinhee Kim, Seung Chul Lyu, Cheol Jin Lee

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

Original languageEnglish
Article number233303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number23
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

Fingerprint

Electron tunneling
electron tunneling
Nanowires
nanowires
Doping (additives)
Transport properties
Semiconductor quantum dots
transport properties
quantum dots
Temperature
Defects
oscillations
temperature
defects

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires. / Kim, Jae Ryoung; Kim, Byoung Kye; Lee, I. J.; Kim, Ju Jin; Kim, Jinhee; Lyu, Seung Chul; Lee, Cheol Jin.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 23, 233303, 01.06.2004.

Research output: Contribution to journalArticle

Kim, Jae Ryoung ; Kim, Byoung Kye ; Lee, I. J. ; Kim, Ju Jin ; Kim, Jinhee ; Lyu, Seung Chul ; Lee, Cheol Jin. / Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 23.
@article{49c91cf437294e0384c3192cd2799e25,
title = "Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires",
abstract = "We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.",
author = "Kim, {Jae Ryoung} and Kim, {Byoung Kye} and Lee, {I. J.} and Kim, {Ju Jin} and Jinhee Kim and Lyu, {Seung Chul} and Lee, {Cheol Jin}",
year = "2004",
month = "6",
day = "1",
doi = "10.1103/PhysRevB.69.233303",
language = "English",
volume = "69",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

AU - Kim, Jae Ryoung

AU - Kim, Byoung Kye

AU - Lee, I. J.

AU - Kim, Ju Jin

AU - Kim, Jinhee

AU - Lyu, Seung Chul

AU - Lee, Cheol Jin

PY - 2004/6/1

Y1 - 2004/6/1

N2 - We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

AB - We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

UR - http://www.scopus.com/inward/record.url?scp=37649032815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37649032815&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.69.233303

DO - 10.1103/PhysRevB.69.233303

M3 - Article

AN - SCOPUS:37649032815

VL - 69

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 23

M1 - 233303

ER -