Abstract
Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 33-38 |
| Number of pages | 6 |
| Journal | Chemical Physics Letters |
| Volume | 343 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2001 Jul 27 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Spectroscopy
- Atomic and Molecular Physics, and Optics
Cite this
Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition. / Lee, Cheol Jin; Park, Jeunghee; Huh, Yoon; Yong Lee, Jeong.
In: Chemical Physics Letters, Vol. 343, No. 1-2, 27.07.2001, p. 33-38.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition
AU - Lee, Cheol Jin
AU - Park, Jeunghee
AU - Huh, Yoon
AU - Yong Lee, Jeong
PY - 2001/7/27
Y1 - 2001/7/27
N2 - Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
AB - Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
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UR - http://www.scopus.com/inward/citedby.url?scp=0002318025&partnerID=8YFLogxK
U2 - 10.1016/S0009-2614(01)00680-7
DO - 10.1016/S0009-2614(01)00680-7
M3 - Article
AN - SCOPUS:0002318025
VL - 343
SP - 33
EP - 38
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 1-2
ER -