Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition

Cheol Jin Lee, Jeunghee Park, Yoon Huh, Jeong Yong Lee

Research output: Contribution to journalArticle

229 Citations (Scopus)

Abstract

Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalChemical Physics Letters
Volume343
Issue number1-2
DOIs
Publication statusPublished - 2001 Jul 27
Externally publishedYes

Fingerprint

Carbon Nanotubes
Growth temperature
Thermal effects
temperature effects
Chemical vapor deposition
carbon nanotubes
vapor deposition
Crystalline materials
Acetylene
Silicon oxides
Iron
Gases
temperature
silicon oxides
iron oxides
acetylene
Substrates
crystallinity
Hot Temperature
Temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition. / Lee, Cheol Jin; Park, Jeunghee; Huh, Yoon; Yong Lee, Jeong.

In: Chemical Physics Letters, Vol. 343, No. 1-2, 27.07.2001, p. 33-38.

Research output: Contribution to journalArticle

Lee, Cheol Jin ; Park, Jeunghee ; Huh, Yoon ; Yong Lee, Jeong. / Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition. In: Chemical Physics Letters. 2001 ; Vol. 343, No. 1-2. pp. 33-38.
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