TY - JOUR
T1 - Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition
AU - Lee, Cheol Jin
AU - Park, Jeunghee
AU - Huh, Yoon
AU - Yong Lee, Jeong
N1 - Funding Information:
This work was supported by the Brain Korea 21 Project of Kunsan National University and Directed Basic Research Program (Project No: KOSEF 2000-0-210-003-3). We acknowledge the support of this research by the Ministry of Science and Technology of Korea through the National Research Laboratory Program.
PY - 2001/7/27
Y1 - 2001/7/27
N2 - Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
AB - Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
UR - http://www.scopus.com/inward/record.url?scp=0002318025&partnerID=8YFLogxK
U2 - 10.1016/S0009-2614(01)00680-7
DO - 10.1016/S0009-2614(01)00680-7
M3 - Article
AN - SCOPUS:0002318025
VL - 343
SP - 33
EP - 38
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 1-2
ER -