Temperature-gradient annealing of CdZnTe under Te overpressure

Kihyun Kim, J. Suh, A. E. Bolotnikov, P. M. Fochuk, O. V. Kopach, G. S. Camarda, Y. Cui, A. Hossain, G. Yang, J. Hong, R. B. James

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The performance of CdZnTe (CZT) detectors is limited not only by conventional carrier-trapping to point defects but also by trapping at macroscopic Te secondary-phase defects, such as Te inclusions and Te precipitates. The aim of this research is to remove these secondary-phase defects via thermomigration, and to obtain high resistivity of the material by creating Te antisites through annealing in a high Te overpressure. We annealed Te-rich CZT samples in the temperature range between 500 and 700 °C under Te overpressure with a temperature gradient of 50-60 °C/cm. We investigated the effects of annealing under these conditions by IR transmission microscopy, current-voltage measurements, photoluminescence, and white-beam X-ray diffraction topography (WBXDT) measurements comparing the findings with those from isothermally annealed CZT samples under Cd overpressure. We proved experimentally that Te inclusions present in Te-rich CZT melts contain void fractions. We attributed the complex defect of Te antisites with Cd vacancies in our annealing experiment as the deep level defect that pins the Fermi near the middle of the bandgap, rather than the Te antisite.

Original languageEnglish
Pages (from-to)62-66
Number of pages5
JournalJournal of Crystal Growth
Volume354
Issue number1
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

overpressure
Thermal gradients
temperature gradients
Annealing
Defects
annealing
defects
thermomigration
trapping
inclusions
Infrared transmission
Void fraction
Voltage measurement
Electric current measurement
Point defects
Topography
point defects
electrical measurement
Vacancies
Precipitates

Keywords

  • A1. Defects
  • A1. X-ray topography
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kim, K., Suh, J., Bolotnikov, A. E., Fochuk, P. M., Kopach, O. V., Camarda, G. S., ... James, R. B. (2012). Temperature-gradient annealing of CdZnTe under Te overpressure. Journal of Crystal Growth, 354(1), 62-66. https://doi.org/10.1016/j.jcrysgro.2012.03.058

Temperature-gradient annealing of CdZnTe under Te overpressure. / Kim, Kihyun; Suh, J.; Bolotnikov, A. E.; Fochuk, P. M.; Kopach, O. V.; Camarda, G. S.; Cui, Y.; Hossain, A.; Yang, G.; Hong, J.; James, R. B.

In: Journal of Crystal Growth, Vol. 354, No. 1, 01.09.2012, p. 62-66.

Research output: Contribution to journalArticle

Kim, K, Suh, J, Bolotnikov, AE, Fochuk, PM, Kopach, OV, Camarda, GS, Cui, Y, Hossain, A, Yang, G, Hong, J & James, RB 2012, 'Temperature-gradient annealing of CdZnTe under Te overpressure', Journal of Crystal Growth, vol. 354, no. 1, pp. 62-66. https://doi.org/10.1016/j.jcrysgro.2012.03.058
Kim K, Suh J, Bolotnikov AE, Fochuk PM, Kopach OV, Camarda GS et al. Temperature-gradient annealing of CdZnTe under Te overpressure. Journal of Crystal Growth. 2012 Sep 1;354(1):62-66. https://doi.org/10.1016/j.jcrysgro.2012.03.058
Kim, Kihyun ; Suh, J. ; Bolotnikov, A. E. ; Fochuk, P. M. ; Kopach, O. V. ; Camarda, G. S. ; Cui, Y. ; Hossain, A. ; Yang, G. ; Hong, J. ; James, R. B. / Temperature-gradient annealing of CdZnTe under Te overpressure. In: Journal of Crystal Growth. 2012 ; Vol. 354, No. 1. pp. 62-66.
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