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Temperature increase in nanostructured cells of a magnetic tunnel junction during current-induced magnetization switching
J. H. Namkoong,
S. H. Lim
Department of Materials Science and Engineering
Research output
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Contribution to journal
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Article
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peer-review
13
Citations (Scopus)
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Engineering & Materials Science
Tunnel junctions
100%
Induced currents
90%
Magnetization
84%
Temperature
28%
Current density
22%
Joule heating
15%
Data storage equipment
14%
Thermodynamic stability
12%
Electrons
11%
Relaxation
11%
Finite element method
7%
Hot Temperature
5%
Physics & Astronomy
tunnel junctions
73%
magnetization
46%
cells
38%
random access memory
27%
temperature
21%
current density
16%
products
15%
Joule heating
13%
thermal stability
10%
finite element method
9%
trends
8%
heat
7%
causes
7%
electrons
4%
Chemical Compounds
Magnetization
66%
Current Density
52%
Heat
26%
Thermal Stability
23%
Electron Particle
19%