TY - JOUR
T1 - Temperature-independent physical properties of electrophoretic Ti5NbO14 films for high-temperature capacitors
AU - Im, Mir
AU - Lee, Woong Hee
AU - Kweon, Sang Hyo
AU - Kim, Jong Hyun
AU - Nahm, Sahn
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We also thank the KU?KIST graduate school program of Korea University.
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We also thank the KU–KIST graduate school program of Korea University.
PY - 2019/10
Y1 - 2019/10
N2 - Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.
AB - Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.
KW - 2D metal-oxide nanosheets
KW - Electrophoresis
KW - High-temperature capacitors
KW - Titanoniobates
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U2 - 10.1016/j.jeurceramsoc.2019.05.016
DO - 10.1016/j.jeurceramsoc.2019.05.016
M3 - Article
AN - SCOPUS:85065800812
VL - 39
SP - 3730
EP - 3737
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 13
ER -