Temperature-independent physical properties of electrophoretic Ti5NbO14 films for high-temperature capacitors

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Jong Hyun Kim, Sahn Nahm

Research output: Contribution to journalArticlepeer-review


Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

Original languageEnglish
Pages (from-to)3730-3737
Number of pages8
JournalJournal of the European Ceramic Society
Issue number13
Publication statusPublished - 2019 Oct


  • 2D metal-oxide nanosheets
  • Electrophoresis
  • High-temperature capacitors
  • Titanoniobates

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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