Abstract
Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.
| Original language | English |
|---|---|
| Journal | Journal of the European Ceramic Society |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
Fingerprint
Keywords
- 2D metal-oxide nanosheets
- Electrophoresis
- High-temperature capacitors
- Titanoniobates
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
Temperature-independent physical properties of electrophoretic Ti 5 NbO 14 films for high-temperature capacitors . / Im, Mir; Lee, Woong Hee; Kweon, Sang Hyo; Kim, Jong Hyun; Nahm, Sahn.
In: Journal of the European Ceramic Society, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature-independent physical properties of electrophoretic Ti 5 NbO 14 films for high-temperature capacitors
AU - Im, Mir
AU - Lee, Woong Hee
AU - Kweon, Sang Hyo
AU - Kim, Jong Hyun
AU - Nahm, Sahn
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.
AB - Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.
KW - 2D metal-oxide nanosheets
KW - Electrophoresis
KW - High-temperature capacitors
KW - Titanoniobates
UR - http://www.scopus.com/inward/record.url?scp=85065800812&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85065800812&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2019.05.016
DO - 10.1016/j.jeurceramsoc.2019.05.016
M3 - Article
AN - SCOPUS:85065800812
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
ER -