Temperature-independent physical properties of electrophoretic Ti 5 NbO 14 films for high-temperature capacitors

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Jong Hyun Kim, Sahn Nahm

Research output: Contribution to journalArticle

Abstract

Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

Original languageEnglish
JournalJournal of the European Ceramic Society
DOIs
Publication statusPublished - 2019 Jan 1

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Capacitors
Physical properties
Temperature
Defects
Nanosheets
Dielectric losses
Film thickness
Permittivity
Capacitance
Electric fields
Substrates

Keywords

  • 2D metal-oxide nanosheets
  • Electrophoresis
  • High-temperature capacitors
  • Titanoniobates

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Temperature-independent physical properties of electrophoretic Ti 5 NbO 14 films for high-temperature capacitors . / Im, Mir; Lee, Woong Hee; Kweon, Sang Hyo; Kim, Jong Hyun; Nahm, Sahn.

In: Journal of the European Ceramic Society, 01.01.2019.

Research output: Contribution to journalArticle

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abstract = "Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0{\%}. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.",
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AU - Im, Mir

AU - Lee, Woong Hee

AU - Kweon, Sang Hyo

AU - Kim, Jong Hyun

AU - Nahm, Sahn

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N2 - Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

AB - Ti 5 NbO 14 (T5NO) films were developed on Pt/Ti/SiO 2 /Si substrates by electrophoretic method by using T5NO 3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA + defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε r ) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

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