Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

Sangyeop Lee, Seonghoon Choi, Seul Ki Bac, Hakjoon Lee, Taehee Yoo, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

Abstract

We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalSolid State Communications
Volume244
DOIs
Publication statusPublished - 2016 Oct 1

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Magnetic anisotropy
anisotropy
Magnetization
Hall effect
Anisotropy
Temperature
magnetization
temperature
Direction compound
Semiconductor materials
Magnetic fields
Substrates
temperature dependence
magnetic fields

Keywords

  • Ferromagnetic semiconductor
  • Magnetic anisotropy
  • Planar Hall Effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film. / Lee, Sangyeop; Choi, Seonghoon; Bac, Seul Ki; Lee, Hakjoon; Yoo, Taehee; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Solid State Communications, Vol. 244, 01.10.2016, p. 7-11.

Research output: Contribution to journalArticle

Lee, Sangyeop ; Choi, Seonghoon ; Bac, Seul Ki ; Lee, Hakjoon ; Yoo, Taehee ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film. In: Solid State Communications. 2016 ; Vol. 244. pp. 7-11.
@article{e4f65709e6ff4441a5597e40fdfa4d4c,
title = "Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film",
abstract = "We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.",
keywords = "Ferromagnetic semiconductor, Magnetic anisotropy, Planar Hall Effect",
author = "Sangyeop Lee and Seonghoon Choi and Bac, {Seul Ki} and Hakjoon Lee and Taehee Yoo and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2016",
month = "10",
day = "1",
doi = "10.1016/j.ssc.2016.06.009",
language = "English",
volume = "244",
pages = "7--11",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

AU - Lee, Sangyeop

AU - Choi, Seonghoon

AU - Bac, Seul Ki

AU - Lee, Hakjoon

AU - Yoo, Taehee

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

AB - We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

KW - Ferromagnetic semiconductor

KW - Magnetic anisotropy

KW - Planar Hall Effect

UR - http://www.scopus.com/inward/record.url?scp=84976337247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84976337247&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2016.06.009

DO - 10.1016/j.ssc.2016.06.009

M3 - Article

AN - SCOPUS:84976337247

VL - 244

SP - 7

EP - 11

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -