Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

Sangyeop Lee, Seonghoon Choi, Seul Ki Bac, Hakjoon Lee, Taehee Yoo, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

Abstract

We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalSolid State Communications
Volume244
DOIs
Publication statusPublished - 2016 Oct 1

Keywords

  • Ferromagnetic semiconductor
  • Magnetic anisotropy
  • Planar Hall Effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

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