Temperature stress on pristine ZnO nanowire field effect transistor

Kyoungwon Kim, Pulak Chandra Debnath, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (Vth) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in Vth is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in Vth in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model.

Original languageEnglish
Article number113109
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
Publication statusPublished - 2011 Mar 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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