Terahertz InP HBT Oscillators

Jae-Sung Rieh, Jongwon Yun, Daekeun Yoon, Jungsoo Kim, Heekang Son

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538659717
DOIs
Publication statusPublished - 2018 Nov 5
Event2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia
Duration: 2018 Aug 152018 Aug 17

Other

Other2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
CountryAustralia
CityMelbourne
Period18/8/1518/8/17

Keywords

  • heterojunction bipolar transistors (HBT)
  • oscillators
  • Submillimeter wave circuits

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Rieh, J-S., Yun, J., Yoon, D., Kim, J., & Son, H. (2018). Terahertz InP HBT Oscillators. In 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 [8524043] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2018.8524043