Texture development and magnetoresistance properties of CoFeBMgOCoFeB -based magnetic tunnel junction depending on capping layer crystallinity

Ha Chang Chung, Seong Rae Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the effects of the crystallinity of the capping layer materials on the crystallization of amorphous top CoFeB (t-CoFeB) and the magnetoresistance properties and temperature sensitivities of the magnetic tunnel junctions (MTJs). When a (002)-textured hcp Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (110) during annealing. Using the CoFe (110)/Ru (002) texture relation is the best way to reduce the lattice mismatch down to 5.6%. However, when a polycrystalline TiAl (two phase: amorphous and fine polycrystalline) or amorphous ZrAl capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (002) during annealing due to the MgO (001) template effect. The tunneling magneto resistance ratios of the annealed MTJs capped with Ru, TiAl, and ZrAl were 46.7%, 71.8%, and 72.7%, respectively, which depended on the texture and the epitaxiality of t-CoFeBMgO (001). Consequently, the texture evolution of the amorphous t-CoFeB during annealing can be controlled by adjusting the crystallinity of the adjacent capping layer which, in turn, affects the magnetoresistance properties and temperature sensitivities of the MTJs.

Original languageEnglish
Article number07A914
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

Fingerprint

tunnel junctions
crystallinity
textures
annealing
templates
adjusting
crystallization
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

@article{1765532459164453848f8fe09b903fe5,
title = "Texture development and magnetoresistance properties of CoFeBMgOCoFeB -based magnetic tunnel junction depending on capping layer crystallinity",
abstract = "We investigated the effects of the crystallinity of the capping layer materials on the crystallization of amorphous top CoFeB (t-CoFeB) and the magnetoresistance properties and temperature sensitivities of the magnetic tunnel junctions (MTJs). When a (002)-textured hcp Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (110) during annealing. Using the CoFe (110)/Ru (002) texture relation is the best way to reduce the lattice mismatch down to 5.6{\%}. However, when a polycrystalline TiAl (two phase: amorphous and fine polycrystalline) or amorphous ZrAl capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (002) during annealing due to the MgO (001) template effect. The tunneling magneto resistance ratios of the annealed MTJs capped with Ru, TiAl, and ZrAl were 46.7{\%}, 71.8{\%}, and 72.7{\%}, respectively, which depended on the texture and the epitaxiality of t-CoFeBMgO (001). Consequently, the texture evolution of the amorphous t-CoFeB during annealing can be controlled by adjusting the crystallinity of the adjacent capping layer which, in turn, affects the magnetoresistance properties and temperature sensitivities of the MTJs.",
author = "Chung, {Ha Chang} and Lee, {Seong Rae}",
year = "2008",
month = "4",
day = "21",
doi = "10.1063/1.2837477",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Texture development and magnetoresistance properties of CoFeBMgOCoFeB -based magnetic tunnel junction depending on capping layer crystallinity

AU - Chung, Ha Chang

AU - Lee, Seong Rae

PY - 2008/4/21

Y1 - 2008/4/21

N2 - We investigated the effects of the crystallinity of the capping layer materials on the crystallization of amorphous top CoFeB (t-CoFeB) and the magnetoresistance properties and temperature sensitivities of the magnetic tunnel junctions (MTJs). When a (002)-textured hcp Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (110) during annealing. Using the CoFe (110)/Ru (002) texture relation is the best way to reduce the lattice mismatch down to 5.6%. However, when a polycrystalline TiAl (two phase: amorphous and fine polycrystalline) or amorphous ZrAl capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (002) during annealing due to the MgO (001) template effect. The tunneling magneto resistance ratios of the annealed MTJs capped with Ru, TiAl, and ZrAl were 46.7%, 71.8%, and 72.7%, respectively, which depended on the texture and the epitaxiality of t-CoFeBMgO (001). Consequently, the texture evolution of the amorphous t-CoFeB during annealing can be controlled by adjusting the crystallinity of the adjacent capping layer which, in turn, affects the magnetoresistance properties and temperature sensitivities of the MTJs.

AB - We investigated the effects of the crystallinity of the capping layer materials on the crystallization of amorphous top CoFeB (t-CoFeB) and the magnetoresistance properties and temperature sensitivities of the magnetic tunnel junctions (MTJs). When a (002)-textured hcp Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (110) during annealing. Using the CoFe (110)/Ru (002) texture relation is the best way to reduce the lattice mismatch down to 5.6%. However, when a polycrystalline TiAl (two phase: amorphous and fine polycrystalline) or amorphous ZrAl capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (002) during annealing due to the MgO (001) template effect. The tunneling magneto resistance ratios of the annealed MTJs capped with Ru, TiAl, and ZrAl were 46.7%, 71.8%, and 72.7%, respectively, which depended on the texture and the epitaxiality of t-CoFeBMgO (001). Consequently, the texture evolution of the amorphous t-CoFeB during annealing can be controlled by adjusting the crystallinity of the adjacent capping layer which, in turn, affects the magnetoresistance properties and temperature sensitivities of the MTJs.

UR - http://www.scopus.com/inward/record.url?scp=42149181797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149181797&partnerID=8YFLogxK

U2 - 10.1063/1.2837477

DO - 10.1063/1.2837477

M3 - Article

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07A914

ER -