Texturing of multi-crystalline silicon using isotropic etching solution

Jung Hyun Eum, Kwan Young Choi, Sahn Nahm, Kyoon Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HNO3/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/ HNO 3 ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of 16∼19% for wavelength between 400 nm and 900 nm depending on different etching conditions.

Original languageEnglish
Pages (from-to)685-688
Number of pages4
JournalJournal of the Korean Ceramic Society
Volume46
Issue number6
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Texturing
Silicon
Etching
Crystalline materials
Silicon wafers
Surface morphology
Spectrophotometers
Silicon solar cells
Alkalies
Surface structure
Crystal orientation
Wavelength
Scanning electron microscopy
Water

Keywords

  • Alkali solution
  • Isotropic texturing
  • Multi-crystalline silicon
  • Reflectance

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Texturing of multi-crystalline silicon using isotropic etching solution. / Eum, Jung Hyun; Choi, Kwan Young; Nahm, Sahn; Choi, Kyoon.

In: Journal of the Korean Ceramic Society, Vol. 46, No. 6, 01.12.2009, p. 685-688.

Research output: Contribution to journalArticle

Eum, Jung Hyun ; Choi, Kwan Young ; Nahm, Sahn ; Choi, Kyoon. / Texturing of multi-crystalline silicon using isotropic etching solution. In: Journal of the Korean Ceramic Society. 2009 ; Vol. 46, No. 6. pp. 685-688.
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