The deposition of intrinsic hydrogenated amorphous silicon thin films incorporated with oxygen by plasma-enhanced vapor deposition

Ji Eun Lee, Joo Hyung Park, Jinsu Yoo, Kyung Hoon Yoon, Donghwan Kim, Jun Sik Cho

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Intrinsic hydrogenated amorphous silicon films incorporated with oxygen (i a-Si(H,O):H) were prepared using a plasma-enhanced chemical vapor deposition system with a carbon dioxide (CO2), silane (SiH4) and hydrogen (H2) gas mixture. The influence of oxygen incorporation on the chemical structure and on the optoelectronic properties of the deposited films was investigated. The performance of the solar cells that use these films as absorber layers was also evaluated. For the films incorporated with oxygen, local bonding configurations were identified in which H and O alloy atoms were bonded to the same Si site. With the incorporation of oxygen, the bandgap (Eopt) of the a-Si(H,O):H films increased significantly to 1.82 eV, while that of the pure hydrogenated amorphous (a-Si:H) films was 1.73 eV. The optoelectronic properties of the oxygen-incorporated films degraded due to the newly created dangling bonds that arose from an increased structural disorder. Increasing the hydrogen dilution in the plasma effectively reduced the defect density in the a-Si(H,O):H films, resulting in an improved photosensitivity. The solar cells that used wide-bandgap a-Si(H,O):H films as absorber layers exhibited a 26.3% higher open circuit voltage (Voc) than those that used pure a-Si:H films, mainly because of the increased Eopt of the films and the reduced defect density that was due to a high hydrogen dilution.

Original languageEnglish
Pages (from-to)70-74
Number of pages5
JournalSolid State Sciences
Volume20
DOIs
Publication statusPublished - 2013 Apr 22

Fingerprint

Vapor deposition
Amorphous silicon
amorphous silicon
vapor deposition
Oxygen
Plasmas
Thin films
oxygen
thin films
Hydrogen
Defect density
dilution
Optoelectronic devices
absorbers
Dilution
hydrogen
solar cells
Solar cells
Energy gap
Silanes

Keywords

  • Chemical structure
  • Defect density
  • Hydrogen passivation
  • Hydrogenated silicon film
  • Solar cell

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The deposition of intrinsic hydrogenated amorphous silicon thin films incorporated with oxygen by plasma-enhanced vapor deposition. / Lee, Ji Eun; Park, Joo Hyung; Yoo, Jinsu; Yoon, Kyung Hoon; Kim, Donghwan; Cho, Jun Sik.

In: Solid State Sciences, Vol. 20, 22.04.2013, p. 70-74.

Research output: Contribution to journalArticle

Lee, Ji Eun ; Park, Joo Hyung ; Yoo, Jinsu ; Yoon, Kyung Hoon ; Kim, Donghwan ; Cho, Jun Sik. / The deposition of intrinsic hydrogenated amorphous silicon thin films incorporated with oxygen by plasma-enhanced vapor deposition. In: Solid State Sciences. 2013 ; Vol. 20. pp. 70-74.
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